Order this document by MRF3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line • Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY TRANSISTORS NPN SILICON MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 30 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 0.4 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C Maximum Junction Temperature TJmax 150 °C CASE 751–05, STYLE 1 (SO–8) THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 83.3 °C/W Thermal Resistance, Junction to Ambient RθJA 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 Ω) V(BR)CER 55 — Vdc Collector–Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) VCEO(sus) 30 — Vdc Emitter–Base Breakdown Voltage (IE = 100 µAdc, IC = 0) V(BR)EBO 3.5 — Vdc Collector Cutoff Current (VCE = 28 Vdc, IB = 0) ICEO — 0.02 mAdc Collector Cutoff Current (VCE = 30 Vdc, VBE = –1.5 Vdc (Rev.), TC = 150°C) (VCE = 55 Vdc, VBE = –1.5 Vdc (Rev.) ICEX — — 5.0 0.1 Emitter Cutoff Current (VBE = 3.5 Vdc, IC = 0) IEBO — 0.1 OFF CHARACTERISTICS mAdc mAdc (continued) (Replaces MPS3866/D) RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF3866R2 1 ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 5.0 10 — 200 VCE(sat) — 1.0 Vdc fT 500 — MHz Cobo — 3.0 pF Amplifier Power Gain (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Gpe 10 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) η 45 — % ON CHARACTERISTICS DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (1) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TEST NOTE: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. S11 S21 S12 S22 VCE (Volts) IC (mA) f (MHz) S11 ∠φ S21 ∠φ S12 ∠φ S22 ∠φ 15 50 100 200 300 400 500 600 700 800 900 1000 0.67 0.69 0.70 0.71 0.72 0.72 0.72 0.72 0.71 0.70 – 166 – 176 177 172 168 164 160 155 151 146 13.75 6.93 4.57 3.38 2.66 2.17 1.85 1.61 1.40 1.25 92 81 73 67 61 54 49 44 39 34 0.016 0.024 0.032 0.042 0.049 0.056 0.061 0.068 0.075 0.084 44 53 57 59 59 61 63 65 64 68 0.32 0.30 0.32 0.34 0.37 0.40 0.43 0.47 0.50 0.53 – 27 – 24 – 31 – 37 – 45 – 53 – 60 – 66 – 73 – 79 Table 1. MRF3866R2 Common Emitter S–Parameters MRF3866R2 2 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 8 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S q CASE 751–05 ISSUE S MOTOROLA RF DEVICE DATA DIM A A1 B C D E e H h L STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ EMITTER COLLECTOR COLLECTOR EMITTER EMITTER BASE BASE EMITTER MRF3866R2 3 Motorola reserves the right to make changes without further notice to any products herein. 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