BFT51F.A NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 126 The ASI BFT51F.A is Designed for High Frequency Amplifier Applications. MAXIMUM RATINGS IC 500 mA VCE 20 V PDISS 3.0 W @ TC = 25 C TJ -65 C to +175 C TSTG -65 C to +175 C θJC 50 C/W O O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA BVCER IC = 1.0 mA BVCBO IC = 1.0 mA ICEO VCE = 5.0 V 1.0 mA ICES VCE = 10 V 100 µA IEBO VEB = 3.0 V 1.0 mA RBE = 100 Ω VCE = 5.0 V IC = 100 mA IC = 300 mA ft VCE = 5.0 V IC = 300 mA Cob VCB = 5.0 V hFE 10 V 18 V 20 V --- 40 f = 100 MHz 1.0 f = 1.0 MHz 2.0 GHz 4.0 pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1