MRF650 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF650 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold™ Metalization System 2x ØN FU LL R D B MAXIMUM RATINGS IC 12 A VCBO 36 V VCEO VCES VEBO TJ M K H 16 V 4.0 V I L M AX IM U M M IN IM U M inche s / m m inche s / m m A .150 / 3.43 .160 / 4.06 .045 / 1.14 B 36 V J D IM C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H PDISS E .725/18,42 F G 175 W @ TC = 25 °C I J .970 / 24.64 .980 / 24.89 -65 °C to +200 °C K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .725 / 18.42 .170 / 4.32 .285 / 7.24 M TSTG -65 °C to +150 °C θJC 1.0 °C/W CHARACTERISTICS .135 / 3.43 TC = 25 °C NONETEST CONDITIONS SYMBOL .120 / 3.05 N MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 20 mA 36 V BVCBO IC = 5.0 mA 36 BVEBO IE = 5.0 mA 4.0 ICBO VCB = 15 V 5.0 mA ICES VCE = 22 V 5.0 mA hFE VCE = 5.0 V 200 --- Cob VCB = 12.5 V 150 pF PG ηC VCE = 12.5 V IC = 5.0 A V 20 f = 1.0 MHz POUT = 45 W f = 470 MHz 5.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. A 1/1