ASI MRF650

MRF650
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF650 is Designed for
Class C, FM Land Mobile Applications
up to 470 MHz.
PACKAGE STYLE .500 6L FLG
FEATURES:
A
C
• Internal Input Matching Network
• PG = 5.0 dB at 45 W/470 MHz
• Omnigold™ Metalization System
2x ØN
FU LL R
D
B
MAXIMUM RATINGS
IC
12 A
VCBO
36 V
VCEO
VCES
VEBO
TJ
M
K
H
16 V
4.0 V
I
L
M AX IM U M
M IN IM U M
inche s / m m
inche s / m m
A
.150 / 3.43
.160 / 4.06
.045 / 1.14
B
36 V
J
D IM
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
H
PDISS
E
.725/18,42
F
G
175 W @ TC = 25 °C
I
J
.970 / 24.64
.980 / 24.89
-65 °C to +200 °C
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.725 / 18.42
.170 / 4.32
.285 / 7.24
M
TSTG
-65 °C to +150 °C
θJC
1.0 °C/W
CHARACTERISTICS
.135 / 3.43
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.120 / 3.05
N
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
16
V
BVCES
IC = 20 mA
36
V
BVCBO
IC = 5.0 mA
36
BVEBO
IE = 5.0 mA
4.0
ICBO
VCB = 15 V
5.0
mA
ICES
VCE = 22 V
5.0
mA
hFE
VCE = 5.0 V
200
---
Cob
VCB = 12.5 V
150
pF
PG
ηC
VCE = 12.5 V
IC = 5.0 A
V
20
f = 1.0 MHz
POUT = 45 W
f = 470 MHz
5.0
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
REV. A
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