PTF10019 MOS FIELD EFFECT TRANSISTOR DESCRIPTION: The ASI PTF10019 is Designed for Cellular, GSM, and D-AMPS applicarions from 860 tp 960 MHz. PACKAGE STYLE FEATURES: • 70 W, 860-960 MHz • Internally matched • Omnigold™ Metalization System • Silicon Nitride Passivated MAXIMUM RATINGS VDSS 65 V VGS ±20 V PDISS 215 W @ TC = 25 °C TJ -40 °C to +200 °C TSTG -40 °C to +150 °C θJC 0.8 °C/W CHARACTERISTICS VGS = 0 v ID = 25 mA IDSS VDS = 26 V VGS(th) VDS = 10 V ID = 75 mA Gfs VDS = 10 V ID = 3.0 A VDD = 28 V f = 960 MHz POUT = 70 W PG ηC P-1dB Ψ 2 = GATE 3 = SOURCE TC = 25 °C NONETEST CONDITIONS SYMBOL V(BR)DSS 1 = DRAIN MINIMUM TYPICAL MAXIMUM 65 V 3.0 IDQ = 600 mA 13.0 45 70 1.0 mA 5.0 V 3.0 Siemens 14.5 50 75 dB % W --- 10:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. UNITS REV. A 1/1