SD1727 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1727 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 10 A VCB 110 V PDISS 233 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +150 OC θ JC 0.75 OC/W CHARACTERISTICS SYMBOL 1 = COLLECTOR 3 = BASE 2 &4 =EMITTER TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 100 mA 55 V BV CES IC = 100 mA 110 V BV CBO IC = 100 mA 110 V BV EBO IE = 10 mA 4.0 V ICES VCE = 60 V 5.0 mA ICEO VCE = 30 V 5.0 mA hFE VCE = 6.0 V 50 --- Cob VCB = 50 V 220 pF PG IMD3 ηC VCE = 50 V -30 dB dBc % IC = 1.4 A 15 f = 1.0 MHz 14 Icq = 100 mA Pout = 150 W (PEP) f = 30 MHz 37 -37 45 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004