2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 33 C/W O O O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 25 V BVCBO IC = 10 mA 45 V BVEBO IE = 1.0 mA 3.0 V hFE VCE = 5.0 V COB VCB = 15 V PG P1dB VCE = 15 V IC = 100 mA 20 f = 1.0 MHz IC = 100 mA POUT = 0.5 W 13 f = 1000 MHz +27 --- 3.0 pF dB +29 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 200 dBm REV. A 1/2 TVU005B S - PARAMETERS VCE = 20 Volts, S11 ID = 150 mA FREQ. MHz MAG. ANG. MAG. S21 ANG. MAG. S12 ANG. MAG. S22 ANG. 100 200 300 400 500 600 700 800 900 1,000 0.735 0.840 0.860 0.857 0.855 0.850 0.850 0.850 0.855 0.860 190 188 181 178 173 170 168 165 163 161 13.65 8.15 5.75 4.25 3.50 2.80 2.45 2.20 2.00 1.75 115 100 90 80 70 66 60 55 50 45 0.025 0.025 0.025 0.030 0.035 0.035 0.040 0.045 0.050 0.055 30 30 30 30 35 35 35 40 45 45 0.364 0.275 0.280 0.285 0.300 0.310 0.320 0.330 0.340 0.350 280 240 240 230 225 220 215 210 215 215 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 2/2