ASI SD4100

SD4100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD4100 is a gold mettalized
RF power transistor designed for high
linearity Class-AB operation in UHF
and band IV and V for TV transmitters.
It utilizes emitter ballasting for high
reliability and ruggedness.
PACKAGE STYLE .450 BAL FLG(A)
.060x45°
B
A
E
3
D
P
FEATURES:
3
2
2
G
H
• Common Emitter, Class AB push-pull
• PG = 8.5 dB at 100 W/860 MHz
• Omnigold™ Metalization System
• 28 V operations
J
K
M
MAXIMUM
MINIMUM
DIM
inches / mm
inches / mm
.055 / 1.40
.120 / 3.05
B
MAXIMUM RATINGS
.130 / 3.30
.785 / 19.94
C
16 A
D
.455 / 11.56
E
.120 / 3.05
65 V
VCE
PDISS
.465 / 11.81
.130 / 3.30
.230 / 5.84
F
VCB
N
L
A
G
.838 / 21.28
.850 / 21.59
H
1.095 / 27.81
1.105 / 28.07
30 V
J
.525 / 13.34
.535 / 13.59
K
.002 / 0.05
.005 / 0.15
220 W @TC = 25 °C
L
.055 / 1.40
.065 / 1.65
M
.080 . 2.03
.095 / 2.41
.445 / 11.30
.455 / 11.56
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.8 °C/W
CHARACTERISTICS
.195 / 4.95
N
P
1 = COLLECTOR 2 = BASE 3 = EMITTER
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
BVCEO
IC = 80 mA
BVCER
IC = 120 mA
BVEBO
IE = 20 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
PG
ηC
.100x45°
1 1
C
F
IC
FULL R
RBE = 75 Ω
IC = 4.0 A
VCE = 28 V
ICQ = 2 X 100 mA
PREF = 25 W
POUT = 100 W
MINIMUM TYPICAL MAXIMUM
30
V
40
V
3.5
V
25
f = 860 MHz
UNITS
8.5
55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
10
mA
120
--dB
REV. A
1/1