SD4100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD4100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .450 BAL FLG(A) .060x45° B A E 3 D P FEATURES: 3 2 2 G H • Common Emitter, Class AB push-pull • PG = 8.5 dB at 100 W/860 MHz • Omnigold™ Metalization System • 28 V operations J K M MAXIMUM MINIMUM DIM inches / mm inches / mm .055 / 1.40 .120 / 3.05 B MAXIMUM RATINGS .130 / 3.30 .785 / 19.94 C 16 A D .455 / 11.56 E .120 / 3.05 65 V VCE PDISS .465 / 11.81 .130 / 3.30 .230 / 5.84 F VCB N L A G .838 / 21.28 .850 / 21.59 H 1.095 / 27.81 1.105 / 28.07 30 V J .525 / 13.34 .535 / 13.59 K .002 / 0.05 .005 / 0.15 220 W @TC = 25 °C L .055 / 1.40 .065 / 1.65 M .080 . 2.03 .095 / 2.41 .445 / 11.30 .455 / 11.56 TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.8 °C/W CHARACTERISTICS .195 / 4.95 N P 1 = COLLECTOR 2 = BASE 3 = EMITTER TC = 25 °C NONETEST CONDITIONS SYMBOL BVCEO IC = 80 mA BVCER IC = 120 mA BVEBO IE = 20 mA ICES VE = 28 V hFE VCE = 5.0 V PG ηC .100x45° 1 1 C F IC FULL R RBE = 75 Ω IC = 4.0 A VCE = 28 V ICQ = 2 X 100 mA PREF = 25 W POUT = 100 W MINIMUM TYPICAL MAXIMUM 30 V 40 V 3.5 V 25 f = 860 MHz UNITS 8.5 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 mA 120 --dB REV. A 1/1