ASI TVU001

TVU001
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU001 is designed for UHF
linear applications; especially TV
bands IV & V. It is characterized for
high linearity, Class-A operation. It
utilizes Emitter Ballasting and gold
metalization for ruggedness &
reliability.
PACKAGE STYLE .280 4L STUD
A
45°
C
E
B
E
B
FEATURES:
C
D
J
• Common Emitter, 20 V operation
• PG = 10 dB at 1.0 W/860 MHz
• Omnigold™ Metalization System
• Emitter Ballasting
E
G
H
K
MAXIMUM RATINGS
IC
1.2 A
VCBO
45 V
3.5 V
PDISS
19.4 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
9.0 °C/W
inches / mm
A
1.010 / 25.65
1.055 / 26.80
MAXIMUM
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
.572 / 14.53
.130 / 3.30
.245 / 6.22
.255 / 6.48
.640 / 16.26
I
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10643
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
inches / mm
H
VEBO
CHARACTERISTICS
MINIMUM
G
25 V
#8-32 UNC
DIM
F
VCEO
I
F
BVCBO
IC = 2.0 mA
BVCER
IC = 40 mA
BVCEO
MINIMUM TYPICAL MAXIMUM
UNITS
45
V
50
V
IC = 40 mA
24
V
BVEBO
IE = 0.5 mA
3.5
V
ICBO
VCB = 28 V
RBE = 10 Ω
0.45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
REV. C
1/2
ERROR! REFERENCE SOURCE NOT
FOUND.
TVU001
CHARACTERISTICS
TC = 25 °C
hFE
VCE = 5.0 V
IC = 200 mA
20
COB
VCB = 28 V
PG
IMD3
VCE = 20 V
IC = 440 mA
POUT = 1.0 W
f2 = 863.5 MHz (-16 dBc),
f1 = 860 MHz (-8 dBc),
f3 = 864.5 MHz (-7 dBc)
f = 1.0 MHz
10
-60
120
---
7.0
pF
dB
dBc
IMPEDANCE DATA
FREQ. (MHz)
470
650
860
ZIN (Ω)
2.0 – j1.5
1.9 – j0.9
1.8 + j0.8
ZCL (Ω)
23 – j35
15 – j27
8.0 – j15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2