TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU150 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG(D) FEATURES: .080x45° A FULL R B (4X).060 R • Common Emitter • PG = 10 dB at 150 W/860 MHz • Omnigold™ Metalization System .1925 E D M C F G H N I MAXIMUM RATINGS L J K 25 A IC VCEO 28 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .210 / 5.33 B .125 / 3.18 C VCES 60 V VEBO 3.5 V PDISS -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 0.55 °C/W CHARACTERISTICS .390 / 9.91 E .580 / 14.73 .620 / 15.75 .435 / 11.05 G 1.090 / 27.69 1.105 / 28.07 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .100 / 2.54 .115 / 2.92 .230 / 5.84 L M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 ORDER CODE: ASI10652 TC = 25 °C NONETEST CONDITIONS SYMBOL D .380 / 9.65 F 300 W @ TC = 25 °C MAXIMUM BVCEO IC = 100 mA BVCER IC = 100 mA BVCES MINIMUM TYPICAL MAXIMUM UNITS 26 30 V 35 40 V IC = 50 mA 60 80 V BVEBO IE = 10 mA 3.5 4.0 V ICES VCE = 30 V hFE VCE = 5.0 V COB VCB = 26 V PG IMD1 Load Mismatch VCC = 26 V POUT = 40 W RBE = 200 Ω IC = 1.0 A 30 45 f = 1.0 MHz ICQ = 2 X 3000 mA f = 860 MHz 11 -52 VCC = 26 V ICQ = 2 X 150 mA POUT = 150 W PEP VSWR = 5:1 @ all phase angles mA 120 --- 75 pF 9.0 dB dBc No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 REV. C 1/3 TVU150 ERROR! REFERENCE SOURCE NOT FOUND. TEST CIRCUIT LAYOUT TEST CIRCUIT COMPONENT PART LIST PCB Balun 1,2 C1, C2, C23, C25 C3, C4, C21, C22 C5, C16 C6, C9 C7, C10 C8, C11, C24, C26 C13, C17 C12 C14, C18 C15, C19 C20 L1, L4, L5, L8 L2, L3, L6, L7 R1, R2, R3, R4 ROGERS,Σr = 2.55, Height = 31.25 mil 1 oz. Cu. 50 Ω Coaxial Cable Length 2.2” attached to 2 x 50 Ω printed microstrip transmission lines (see photomaster) 75pF Ceramic Chip ATC B 2 x 47pF Ceramic Chip, ATC B 0.8 – 8pF Variable, JOHANSON Giga – Trim 750pF Ceramic Chip, ATC B 39nF Ceramic Chip, ATCB 47µF, 50V Electrolytic 100µF, 50V Electrolytic 9.1 pF Ceramic Chip, ATC A 39nF Ceramic Chip (OPTIONAL) 750pF Ceramic Chip (OPTIONAL) 1.3pF Ceramic Chip, ATC B 12 Turns, #200 AWG, 0.15” I.D. (Tight) 4 Turns, #20AWG, 0.13” I.D. (1:1) 5 X 50 Ω Chip Resistor A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/3 TVU150 ERROR! REFERENCE SOURCE NOT FOUND. PHOTOMASTER OF TEST CIRCUIT A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 3/3