PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ • Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power Output Power (Watts) 20 16 100 12 A-12 3456 43 9834 VDD = 26 V IDQ = 150 mA f = 2.0 GHz 8 4 0 0.0 0.2 0.4 0.6 0.8 1.0 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gps 11 12 — dB Power Output at 1 dB Compressed (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) p-1dB 12 14 — Watts Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) hD 40 45 — % Y — — 10:1 — Gain (VDD = 26 V, POUT = 3 W, IDQ = 150 mA, f = 1.93, 2.0 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10043 Electrical Characteristics Characteristic (100% Tested) Conditions Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Zero Gate Voltage Drain Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 0.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 55 Watts 0.31 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.2 °C/W Broadband Test Fixture Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 60 Efficiency 15 50 Gain Gain 14 13 40 VDD = 26 V 30 IDQ = 150 mA Output Pow er (W) 12 11 1750 1800 1850 1900 1950 2000 20 10 2050 12 Gain (dB) 16 Output Power & Efficiency 14 60 50 Gain Efficiency (%) 10 8 VCC = 26 V - 30 5 IDQ = 150 mA 6 POUT = 10 W 4 2 1900 Frequency (MHz) 20 -15 10 -25 Return Loss 1925 1950 1975 Frequency (MHz) 2 40 0 -35 2000 Return Loss (dB) Efficiency (%) Typical Performance e PTF 10043 Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage 0 -10 VDD = 26 V, IDQ = 150 mA -20 f1 = 1999.9 MHz, f2 = 2000.0 MHz 15 IMD (dBc) 10 IDQ = 150 mA f = 2.0 GHz 5 -30 -40 -50 -60 -70 0 22 24 26 28 30 32 0 34 Power Gain vs. Output Power 13 Cds and Cgs (pF) Power Gain (dB) ICQ = 150 mA 14 ICQ = 75 mA 12 11 10 ICQ = 37 mA VDD = 26 V f = 2.0 GHz 9 8 0.1 1.0 5 7.5 10 12.5 15 Capacitance vs. Supply Voltage * 16 15 2.5 Output Power (Watts-PEP) Supply Voltage (Volts) 10.0 50 45 40 35 30 25 20 15 10 5 0 3 Cgs Output Power (Watts) 2.5 2 1.5 Cds 1 0.5 Crss 0 0 100.0 VGS =0 V f = 1 MHz Crss (pF) Output Power (Watts) 20 10 20 30 40 Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 Voltage nomalized to 1.0 V Series show current (A) Bias Voltage (V) 1.02 1.01 1.00 0.99 0.98 0.97 0.15 0.575 0.96 1 1.425 0.95 1.85 2.275 0.94 -20 0 20 40 60 80 100 Temp. (°C) 3 e PTF 10043 Impedance Data VDS = 26 V, POUT = 12 W, IDQ = 150 mA D Z Source Z0 = 50 W Z Load G S Z Source W Frequency Z Load W GHz R jX R jX 1.75 2.8 -2.4 3.2 1.9 1.80 3.2 -2.7 3.0 1.5 1.85 3.0 -3.2 2.7 0.9 1.90 2.5 -3.1 2.4 0.4 1.95 2.3 -2.8 2.2 0.0 2.00 2.2 -2.5 1.9 -0.6 2.05 2.3 -2.3 1.7 -1.1 Typical Scattering Parameters (VDS = 28 V, ID = 500 mA) f (MHz) S11 S21 S12 Mag Ang Mag Ang Mag Ang Mag Ang 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.912 0.917 0.951 0.964 0.971 0.974 0.975 0.975 0.980 0.979 0.981 0.977 0.975 0.965 0.951 0.929 0.904 0.885 0.892 0.918 0.942 0.964 -143 -150 -163 -168 -171 -174 -175 -177 -178 -179 180 179 177 176 175 174 174 175 177 177 177 176 14.7 11.5 5.83 3.71 2.63 1.99 1.56 1.26 1.07 0.932 0.846 0.790 0.763 0.759 0.782 0.828 0.880 0.884 0.802 0.650 0.489 0.366 86 80 53 39 28 20 12 6 0 -5 -11 -16 -23 -30 -39 -51 -68 -89 -113 -134 -151 -162 0.007 0.006 0.004 0.002 0.002 0.003 0.006 0.008 0.010 0.012 0.014 0.015 0.017 0.019 0.021 0.023 0.025 0.027 0.029 0.030 0.028 0.025 0 -5 -16 0 65 94 98 95 93 92 89 86 83 82 80 78 74 70 67 61 54 56 0.641 0.650 0.750 0.824 0.881 0.931 0.952 0.950 0.951 0.948 0.959 0.965 0.970 0.972 0.974 0.975 0.986 1.00 1.02 1.02 1.01 1.01 -70 -82 -107 -122 -132 -139 -146 -151 -155 -158 -160 -162 -164 -166 -168 -169 -170 -171 -173 -175 -177 -178 4 S22 e PTF 10043 Test Circuit Q1 Block Diagram for f = 2.0 GHz Q1 Z1, Z6 Z2, Z5 Z3 Z4 PTF 10043 50 W 50 W, 0.085 l 7.5 W, 0.154 l 7.9 W, 0.238 l Bias Parts (not shown on layout) R3 2K Potentiometer R4 10 W Resistor RF LDMOS FET Microstrip Microstrip Microstrip Microstrip C1, C4 C2, C3, C6, C8 C5, C7 C9 0.3–3.5 33 pF 0.1 mF, 50 V 100 mF, 50V Trim Capacitor Capacitor ATCB Capacitor Digi-Key P4917-ND Electrolytic Capacitor Digi-Key P5276 L1, L2 #20 AWG 3 Turn, 0.12” I.D. R1, R2 500 W Circuit Board .031" thick, Resistor e r = 4.0, G200, AlliedSignal, 2 oz. copper 10043 e Parts Layout (not to scale) 5 e PTF 10043 Artwork (not to scale) Package Mechanical Specifications Package 20222 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1997, 1998, 1999, 2001 Ericsson Inc. EUS/KR 1522-PTF 10043 Uen Rev. A 01-16-01