VHB80-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB80-12 is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.0 dB at 80 W/175 MHz • Omnigold™ Metalization System 2x ØN FU LL R D B MAXIMUM RATINGS IC 20 A VCBO 36 V VCEO VCES VEBO 16 V 36 V 4.0 V 230 W @ TC = 25 °C J -65 °C to +150 °C θJC 0.75 °C/W CHARACTERISTICS M IN IM U M inche s / m m inche s / m m .150 / 3.43 .160 / 4.06 M AX IM U M .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 .120 / 3.05 N .135 / 3.43 ORDER CODE: ASI10718 TC = 25 °C NONETEST CONDITIONS SYMBOL L A M TSTG I D IM B -65 °C to +200 °C TJ M K H H PDISS E .725/18,42 F G MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 100 mA 18 BVEBO IE = 10 mA 4.0 ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 5.0 A V 10 f = 1.0 MHz POUT = 80 W f = 175 MHz 7.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 15 mA --- --- 380 pF dB % REV. B 1/1