CET CEP12N6

CEP12N6/CEB12N6
CEF12N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP12N6
600V
0.65Ω
12A
10V
CEB12N6
600V
0.65Ω
12A
10V
CEF12N6
600V
0.65Ω
12A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed
S
CEF SERIES
TO-220F
ID
IDM
a
Maximum Power Dissipation @ TC = 25 C
Operating and Store Temperature Range
600
TJ,Tstg
Units
V
±30
12
e
PD
- Derate above 25 C
TO-220F
V
12
d
A
A
48
48
250
60
W
1.67
0.4
W/ C
-55 to 175
d
C
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
0.6
2.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2008.Mar.
http://www.cetsemi.com
Electrical Characteristics
Parameter
CEP12N6/CEB12N6
CEF12N6
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
600
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS =600V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
0.65
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
2
RDS(on)
VGS = 10V, ID = 6A
0.53
gFS
VDS = 25V, ID =6A
10
S
2000
pF
220
pF
11
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID =12A,
VGS = 10V, RGEN = 25Ω
39
78
ns
58
116
ns
149
298
ns
Turn-Off Fall Time
tf
40
80
ns
Total Gate Charge
Qg
51
66
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 400V,ID = 12A,
VGS = 10V
11
nC
19
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
ISf
b
VSDg
VGS = 0V, IS = 12A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) =6A .
g.Full package VSD test condition IS =6A .
2
12
A
1.4
V
CEP12N6/CEB12N6
CEF12N6
20
8
6
VGS=6V
4
VGS=5V
2
0
0
5
10
15
20
TJ=125 C
5
0
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Ciss
1200
800
Coss
400
1.2
10
30
Crss
0
5
10
15
20
25
2.6
2.2
ID=6A
VGS=10V
1.8
1.4
1.0
0.6
0.2
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
25
1600
1.3
15
0
2000
0
25 C
-55 C
2400
VTH, Normalized
Gate-Source Threshold Voltage
ID, Drain Current (A)
VGS=10,9,8,7V
10
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
ID, Drain Current (A)
12
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150 175
10
1
10
0
10
-1
VGS=0V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=400V
ID=12A
10
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP12N6/CEB12N6
CEF12N6
6
4
2
0
0
15
30
45
RDS(ON)Limit
100ms
10
1
1ms
10ms
DC
10
10
60
2
0
TC=25 C
TJ=175 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
0.01
Single Pulse
10
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-5
t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3