CHENMKO ENTERPRISE CO.,LTD CHM2321PT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (1) 0.3~0.51 * P-Channel Enhancement 1.2~1.9 0.89~1.3 0.085~0.2 3 CIRCUIT 0~0.1 0.3~0.6 D 2.1~2.95 1 G Dimensions in millimeters 2S Absolute Maximum Ratings Symbol SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHM2321PT Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ± 12 V Maximum Drain Current - Continuous -3.8 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -15.2 1250 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=5sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 °C/W 2005-12 RATING CHARACTERISTIC CURVES ( CHM2321PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA -1.5 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID =-250 µA -0.4 VGS=-4.5V, ID=-2.4A 45 55 VGS=-2.5V, ID=-2.0A 65 80 VDS =-5V, ID = -1.25A 12 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=-10V, ID=-2.4A VGS=-4.5V 14.8 19 nC 2.8 4.4 V DD= -10V I D = -1.0A , VGS = -1.5 V RGEN= 6 Ω 13 20 8 12 65 100 29 45 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.25A , VGS = 0 V (Note 2) (Note 1) -0.42 A -1.2 V RATING CHARACTERISTIC CURVES ( CHM2321PT ) Typical Electrical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics 15 10 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=4.5,3.0,2.5V 12 -VGS=2V 9 6 3 8 6 4 2 -VGS=1.5V TJ=125 C 0 0 1.0 0.5 1.5 2.0 2.5 0 0.5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 2400 2000 C iss 1200 800 C oss 400 C rss 0 0 2 4 6 8 10 2.2 1.9 ID=250µA 1.1 1.0 0.9 0.8 0.7 1.3 1.0 0.7 0.4 -100 25 50 75 100 125 TJ, Junction Temperature( C) 150 -50 0 50 100 150 200 Figure 6. Body Diode Forward Voltage Variation with Source Current VGS=0V 10 10 10 0 3.0 TJ, Junction Temperature( C) -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage VDS=VGS -25 2.5 1.6 Figure 5. Gate Threshold Variation with Temperature 0.6 -50 2.0 ID=-2.4A VGS=-4.5V -VDS, Drain-to-Source Voltage (V) 1.2 1.5 Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 1600 1.0 -VGS, Gate-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 1.3 -55 C 0 1 0 -1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, Body Diode Forward Voltage (V)