CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHT870PT CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. (SC-59) * High density cell design for low R DS(ON). * Suitable for high packing density. (2) * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. 0.95 (3) 1.7~2.1 2.7~3.1 0.95 (1) 0.3~0.51 CONSTRUCTION 1.2~1.9 * N-Channel Enhancement 0.89~1.3 0.085~0.2 D CIRCUIT 0~0.1 0.3~0.6 3 2.1~2.95 1G S Dimensions in millimeters 2 Absolute Maximum Ratings SC-59/SOT-346 TA = 25°C unless otherwise noted Symbol Parameter CHT870PT Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V VGSS Gate-Source Voltage - Continuous ±20 - Non Repetitive (tp < 50µs) ID Maximum Drain Current - Continuous - Pulsed PD Maximum Power Dissipation ±40 TA= 25°C 250 TA= 70°C 190 V mA TA= 25°C 320 mW TA= 70°C 210 mW TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C 400 °C/W Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 2002-7 RATING CHARACTERISTIC CURVES ( CHT870PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ 60 80 Max Units 1 µA 0.5 mA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V TC=125°C V IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 10 nA IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V -10 nA 2.0 3.0 V Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA 2.0 5.0 VGS = 4.0 V, ID = 100 mA 2.5 4.0 VGS = 10 V, ID = 500mA 0.6 3.75 VGS = 5.0 V, ID = 50 mA 0.09 1.5 VDS(ON) ID(ON) gFS Drain-Source On-Voltage On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA 1 VGS = 10 V, VDS = 7.5VDS(on) 800 1800 VGS = 4.5V, VDS = 10VDS(on) 500 700 VDS = 15 V DS(on), ID = 200 m A 100 V mA mS DYNAMIC CHARACTERISTICS Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time tr toff Turn-Off Time tf Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. VDS = 30 V, VGS = 10 V, I D = 250 mA VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 30 V, RL = 200 Ω, ID = 100 mA, VGS = 10 V, RGEN = 10 Ω VDD = 30 V, RL = 200 Ω, ID = 100 mA, VGS = 10 V, RGEN = 10 Ω nC 0.6 1.0 0.06 25 0.06 5 25 50 6 25 1.2 5 7.5 20 nS 20 nS pF 6 7.5 3 RATING CHARACTERISTIC CURVES ( CHT870PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 .5 6 9.0 V GS =4.0V 8.0 4 .5 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) VGS = 10V 7.0 2 6.0 1 .5 5.0 1 4.0 0 .5 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 .0 5 6 .0 4 7 .0 8 .0 3 9 .0 10 2 1 5 0 Figure 3. On-Resistance Variation with Temperature 0 .4 V GS = 10V R DS(on) , NORMALIZED 4.0 3.0 2.0 1.0 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 250m A 5 TJ = 1 2 5 °C 4 3 25°C 2 -55°C 1 0 150 0 Figure 5. Transfer Characteristics 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 6. Gate Threshold Variation with Temperature 2 T J = -55°C 25°C 125°C 1.6 1.2 0.8 0.4 0 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1 .1 VDS = 10V ID , DRAIN CURRENT (A) 2 6 V GS = 10V 0 -5 0 1 .6 Figure 4. On-Resistance Variation with Drain Current and Temperature 6.0 5.0 0 .8 1 .2 I D , DRA IN CURRENT (A) V DS = VGS 1 .0 5 I D = 1 mA 1 0 .9 5 0 .9 0 .8 5 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 RATING CHARACTERISTIC CURVES ( CHT870PT ) Typical Electrical Characteristics (continued) Figure 8. Body Diode Forward Voltage Variation with Drain Current Figure 7. Breakdown Voltage Variation with Temperature 2 I D = 250µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 V GS = 0 V 1 IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.075 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 0 .5 TJ = 1 2 5 °C 0 .1 25°C 0 .0 5 -5 5 ° C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .4 0 .6 V SD Figure 9. Capacitance Characteristics 1 1 .2 1 .4 Figure 10. Gate Charge Characteristics 60 1.0 VGS , GATE-SOURCE VOLTAGE (V) 40 C iss 20 CAPACITANCE (pF) 0 .8 , BODY DIODE FORWARD VOLTAGE (V) 10 C oss 5 f = 1 MH z 2 V GS = 0V C rss V DS = 3 0 V .8 .6 .4 .2 ID = 2 5 0 m A 1 0 1 2 3 V DS 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 0 .1 Figure 11. 0 .2 0 .3 Q g , GATE CHARGE (nC) t on t d(on) R GEN t off tr RL t d(off) tf 90% 90% V OUT D VGS Output, Vout 10% 10% 90% DUT G Input, Vin S 0.5 Figure 12. Switching Waveforms VDD V IN 0 .4 50% 50% 10% Pulse Width Inverted