CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHT2301PT CURRENT 2.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low R DS(ON). * Suitable for high packing density. (2) * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. 0.95 (3) 1.7~2.1 2.7~3.1 0.95 (1) 0.3~0.51 CONSTRUCTION 1.2~1.9 * P-Channel Enhancement MARKING 0.89~1.3 * 01 0.085~0.2 3 CIRCUIT 0~0.1 0.3~0.6 D 2.1~2.95 1 G Dimensions in millimeters 2S Absolute Maximum Ratings Symbol SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHT2301PT Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V Maximum Drain Current - Continuous (Note 1) -2.3 (Note 2) -10 (Note 1) -1.6 A 1250 mW -55 to 150 °C ID A - Pulsed IS Drain-Source Diose Forward Current PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range (Note 1) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 85 °C/W 2005-12 RATING CHARACTERISTIC CURVES ( CHT2301PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V I GSS Gate-Body Leakage I GSS Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 8 V, VDS = 0 V +100 nA VGS = -8 V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VSD V -20 Diose Forward Voltage VDS = VGS, ID = -250 µA -0.6 V VGS=-4.5V, ID=-2.8A 130 VGS=-2.5V, ID=-2.0A 190 VDS = 0V, IS = -1.0 A 1.0 mΩ V SWITCHING CHARACTERISTICS (Note 3) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd 4.32 VDS=-10V, ID=-1A VGS=-4.5V 1.06 0.84 t on Turn-On Time V DD= -10V 13 tr Rise Time I D = -1.0A , VGEN = -4.5 V 36 t off Turn-Off Time RL= 10 Ω , RGEN= 10 Ω 42 tf Fall Time Note : 3. Guaranteed by design , not subject to production trsting nC 34 nS RATING CHARACTERISTIC CURVES ( CHT2301PT ) Typical Electrical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics 10 10 TJ=-55°C 4.5V 4.0V 3.5V 3.0V 8 I D , DRAIN-SOURCE CURRENT (A) I D , DRAIN-SOURCE CURRENT (A) V G S =5 . 0 V 6 V G S =2 . 5 V 4 V G S =2 . 0 V 2 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) TJ=25°C 6 4 2 0 5 6 0 Figure 3. Breakdown Voltage Variation with Temperature R DS(on) , NORMALIZED 1.05 1.00 0.95 0.90 0.85 0 25 50 75 TJ , JUNCTION T EMPERATURE (°C) 100 DRAIN-SOURCE ON-RESISTANCE BREAKDOWN VOLTAGE BVDSS , NORMALIZED GATE-SOURCE 1.8 ID=-250uA 1.10 -25 6.0 1.4 1.2 1.0 0.8 0.6 -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (°C) 100 125 Figure 6. Gate Charge 5 VGS , GATE TO SOURCE VOLTAGE (V) ID=-250uA 1.09 THRESHOLD VOLTAGE 5.0 VGS=-4.5V ID=-2.8A 0.4 -50 125 1.12 Vth , NORMALIZED GATE-SOURCE 2.0 3.0 4.0 VGS , GATE-TE-SOURCE VOLTAGE (V) 1.6 Figure 5. Gate Threshold Variation with Temperature 1.06 1.03 1.00 0.97 0.94 0.91 -50 1.0 Figure 4. On-Resistance Variation with Temperature 1.15 0.80 -50 TJ=125°C 8 VDS=10V ID=1.0A 4 3 2 1 0 -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (°C) 100 125 0 1 2 3 4 5 Qg , TOTAL GATE CHARGE (nC) 6 7 8