CHENMKO 2N7002VPT

CHENMKO ENTERPRISE CO.,LTD
2N7002VPT
SURFACE MOUNT
Dual N-Channel Enhancement MOS FET
VOLTAGE 60 Volts
CURRENT 0.280 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SOT-563
FEATURE
* Small surface mounting type. (SOT-563)
* High density cell design for low R DS(ON)
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
(1)
0.50
1.5~1.7
0.50
0.15~0.3
CONSTRUCTION
(5)
0.9~1.1
(4)
(3)
1.1~1.3
* Dual N-Channel Enhancement
MARKING
* V7
0.5~0.6
0.09~0.18
CIRCUIT
(6) D1
(1)S1
G2
G1
Absolute Maximum Ratings
S2(4)
D2(3)
1.5~1.7
Dimensions in millimeters
SOT-563
TA = 25°C unless otherwise noted
2N7002VPT
Symbol
Parameter
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
Units
±20
±40
V
ID
Maximum Drain Current - Continuous
280
mA
PD
Maximum Power Dissipation
250
mW
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
833
°C/W
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
2004-06
RATING CHARACTERISTIC CURVES ( 2N7002VPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
60
70
Max
Units
1
µA
500
µA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
TC=125°C
V
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
2.5
V
13.5
Ω
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA , Tj =125°C
1
VGS = 5.0 V, ID = 50 mA
ID(ON)
On-State Drain Current
VGS = 10 V, VDS = 7.5VDS(on)
gFS
Forward Transconductance
VDS = 10 V DS(on), ID = 200 m A
7.5
800
1000
mA
200
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
toff
Turn-Off Time
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
50
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
25
pF
5
20
nS
20
RATING CHARACTERISTIC CURVES ( 2N7002VPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2 .5
6
9.0
V GS =4.0V
8.0
4 .5
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS = 10V
7.0
2
6.0
1 .5
5.0
1
4.0
0 .5
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5 .0
5
6 .0
4
7 .0
8 .0
3
9 .0
10
2
1
5
0
Figure 3. On-Resistance Variation
with Temperature
0 .4
V GS = 10V
R DS(on) , NORMALIZED
4.0
3.0
2.0
1.0
-2 5
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 250m A
5
TJ = 1 2 5 °C
4
3
25°C
2
-55°C
1
0
150
0
Figure 5. Transfer Characteristics
0 .4
0 .8
1 .2
I D , DRAIN CURRENT (A)
1 .6
2
Figure 6. Gate Threshold Variation with
Temperature
2
T J = -55°C
25°C
125°C
1.6
1.2
0.8
0.4
0
0
2
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
10
Vth , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
1 .1
VDS = 10V
ID , DRAIN CURRENT (A)
2
6
V GS = 10V
0
-5 0
1 .6
Figure 4. On-Resistance Variation with Drain
Current and Temperature
6.0
5.0
0 .8
1 .2
I D , DRA IN CURRENT (A)
V DS = VGS
1 .0 5
I D = 1 mA
1
0 .9 5
0 .9
0 .8 5
0 .8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
150
RATING CHARACTERISTIC CURVES ( 2N7002VPT )
Typical Electrical Characteristics (continued)
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
Figure 7. Breakdown Voltage Variation
with Temperature
2
I D = 250µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
V GS = 0 V
1
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
1.075
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
0 .5
TJ = 1 2 5 °C
0 .1
25°C
0 .0 5
-5 5 ° C
0 .0 1
0 .0 0 5
0 .0 0 1
0 .2
150
0 .4
0 .6
V SD
Figure 9. Capacitance Characteristics
1
1 .2
1 .4
Figure 10. Gate Charge Characteristics
60
1.0
VGS , GATE-SOURCE VOLTAGE (V)
40
C iss
20
CAPACITANCE (pF)
0 .8
, BODY DIODE FORWARD VOLTAGE (V)
10
C oss
5
f = 1 MH z
2
V GS = 0V
C rss
V DS = 3 0 V
.8
.6
.4
.2
ID = 2 5 0 m A
1
0
1
2
3
V DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
0
0 .1
Figure 11.
0 .2
0 .3
Q g , GATE CHARGE (nC)
t on
t d(on)
R GEN
t off
tr
RL
t d(off)
tf
90%
90%
V OUT
D
VGS
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
0.5
Figure 12. Switching Waveforms
VDD
V IN
0 .4
50%
50%
10%
Pulse Width
Inverted
RATING CHARACTERISTIC CURVES ( 2N7002VPT )
Typical Electrical Characteristics (continued)
Figure 13. 2N7002VPT Maximum Safe Operating Area
3
2
100
I D , DRAIN CURRENT (A)
1
RDS
(ON)
Lim it
1m
us
s
0.5
10m
0.1
100
0.05
10s
DC
VGS = 10V
s
ms
1s
SINGLE PULSE
0.01
T A = 25° C
0.005
1
2
5
10
V DS , DRAIN-SOURCE VOLTAGE (V)
20
30
60
80
Figure 14. 2N7002VPT Transient Thermal Response Curve
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0 .2
0.1
0.05
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
0.1
0 .0 5
0 .0 2
P(pk)
0 .0 1
t1
0.01
t2
Single Pulse
TJ - T A = P * RθJA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
300