CHENMKO ENTERPRISE CO.,LTD CHT127ZPT SURFACE MOUNT PNP SILICON Transistor VOLTAGE 100 Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * Suitable for high packing density. * High saturation current capability. 6.50+0.20 0.90+0.05 3.5+0.2 7.0+0.3 3.00+0.10 CONSTRUCTION 0.70+0.10 MARKING 0.9+0.2 2.0+0.3 * PNP SILICON Transistor 0.70+0.10 2.30+0.1 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 * ZBP 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E (2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − VCEO collector-emitter voltage open base − VEBO IC emitter-base voltage open collector -5.0 collector current (DC) − − ICM Peak Collector Current − -8.0 A Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 -100 -100 -5.0 V V V A Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT127ZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICEO collector cut-off current PARAMETER VCE = -50 V CONDITIONS ICBO collector cut-off current VCB = -100 V IEBO emitter cut-off current hFE VCEsat MIN. MAX. UNIT − -500 uA − -200 uA VEB=-5.0V − -2.0 mA DC current gain IC = -500 mA; VCE = -3V IC = -3.0A; VCE = -3V 1000 1000 − − collector-emitter saturation voltage IC = -3.0 A; IB =-12m A − -2.0 V − -4.0 V − -2.5 V IE = ie = 0; VCB = - 1 0 V; f = 1 MHz − 300 pF IC =--5.0A; IB = -20 m A VBEON base-emitter saturation voltage IC =--3.0A; VCE=-3.0V Cob collector capacitance fT transition frequency IC = -3.0A; VCE = - 4 V; f = 1.0 MHz 4.0 − MHz