CHENMKO CHT127ZPT

CHENMKO ENTERPRISE CO.,LTD
CHT127ZPT
SURFACE MOUNT
PNP SILICON Transistor
VOLTAGE 100 Volts
CURRENT 5 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
1.65+0.15
* Suitable for high packing density.
* High saturation current capability.
6.50+0.20
0.90+0.05
3.5+0.2
7.0+0.3
3.00+0.10
CONSTRUCTION
0.70+0.10
MARKING
0.9+0.2
2.0+0.3
* PNP SILICON Transistor
0.70+0.10
2.30+0.1
2.0+0.3
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
* ZBP
1
1 Base
CIRCUIT
3
2
2 Emitter
C (3)
3 Collector ( Heat Sink )
(1) B
E (2)
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
VCEO
collector-emitter voltage
open base
−
VEBO
IC
emitter-base voltage
open collector
-5.0
collector current (DC)
−
−
ICM
Peak Collector Current
−
-8.0
A
Ptot
total power dissipation
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
-100
-100
-5.0
V
V
V
A
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT127ZPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICEO
collector cut-off current
PARAMETER
VCE = -50 V
CONDITIONS
ICBO
collector cut-off current
VCB = -100 V
IEBO
emitter cut-off current
hFE
VCEsat
MIN.
MAX.
UNIT
−
-500
uA
−
-200
uA
VEB=-5.0V
−
-2.0
mA
DC current gain
IC = -500 mA; VCE = -3V
IC = -3.0A; VCE = -3V
1000
1000
−
−
collector-emitter saturation
voltage
IC = -3.0 A; IB =-12m A
−
-2.0
V
−
-4.0
V
−
-2.5
V
IE = ie = 0; VCB = - 1 0 V; f = 1 MHz −
300
pF
IC =--5.0A; IB = -20 m A
VBEON
base-emitter saturation voltage IC =--3.0A; VCE=-3.0V
Cob
collector capacitance
fT
transition frequency
IC = -3.0A; VCE = - 4 V;
f = 1.0 MHz
4.0
−
MHz