CHENMKO CHT5401PT

CHENMKO ENTERPRISE CO.,LTD
CHT5401PT
SURFACE MOUNT
PNP SILICON Transistor
VOLTAGE 150 Volts
CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
.019 (0.50)
.041 (1.05)
.033 (0.85)
(3)
(2)
.055 (1.40)
.047 (1.20)
.045 (1.15)
.033 (0.85)
(3) C
CIRCUIT
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
* VT
.002 (0.05)
MARKING
.066 (1.70)
.119 (3.04)
* PNP transistors in one package.
.110 (2.80)
.082 (2.10)
(1)
CONSTRUCTION
.018 (0.30)
FEATURE
* Small flat package. ( SOT-23 )
* Suitable for high packing density.
(1) B
(2) E
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
VCEO
collector-emitter voltage
open base
−
-160
-150
VEBO
emitter-base voltage
open collector
−
-5.0
V
IC
collector current (DC)
−
-200
mA
Ptot
total power dissipation
−
225
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
V
V
2004-11
RATING CHARACTERISTIC CURVES ( CHT5401PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
420
K/W
Note
1.Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
VCB = -120 V
IEBO
emitter cut-off current
VEB=3.0V
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
VBEsat
base-emitter saturation voltage
Cob
collector capacitance
hfe
MIN.
MAX.
UNIT
−
-50
nA
−
-50
nA
−
IC = -1.0 mA; V CE = -5V
50
IC = -10mA; VCE = -5V
60
IC = -50 mA; VCE = -5V
50
IC = -10 mA; IB = -1.0 m A
−
-0.2
V
IC =--50 mA; IB = -5.0 m A
-0.5
IC =-10mA; IB=-1.0mA
−
−
-1.0
V
V
IC =--50 mA; IB = -5.0 m A
−
-1.0
V
IE = ie = 0; VCB = - 1 0 V; f = 1 MHz −
6.0
pF
240
−
VCE=-10V,IC=-1.0mA,f=1.0KHz
40
200
300
MHz
8.0
dB
fT
transition frequency
IC =- 50 mA; VCE = 1 0 V;
f = 100 MHz
100
F
noise Þgure
IC = 200 µA; VCE = 5 V; RS = 1 0 Ω;
f =10Hz to 15.7KHz
−