CHENMKO ENTERPRISE CO.,LTD CHT5401PT SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 .019 (0.50) .041 (1.05) .033 (0.85) (3) (2) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) (3) C CIRCUIT .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * VT .002 (0.05) MARKING .066 (1.70) .119 (3.04) * PNP transistors in one package. .110 (2.80) .082 (2.10) (1) CONSTRUCTION .018 (0.30) FEATURE * Small flat package. ( SOT-23 ) * Suitable for high packing density. (1) B (2) E SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − VCEO collector-emitter voltage open base − -160 -150 VEBO emitter-base voltage open collector − -5.0 V IC collector current (DC) − -200 mA Ptot total power dissipation − 225 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 V V 2004-11 RATING CHARACTERISTIC CURVES ( CHT5401PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 420 K/W Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current VCB = -120 V IEBO emitter cut-off current VEB=3.0V hFE DC current gain VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage Cob collector capacitance hfe MIN. MAX. UNIT − -50 nA − -50 nA − IC = -1.0 mA; V CE = -5V 50 IC = -10mA; VCE = -5V 60 IC = -50 mA; VCE = -5V 50 IC = -10 mA; IB = -1.0 m A − -0.2 V IC =--50 mA; IB = -5.0 m A -0.5 IC =-10mA; IB=-1.0mA − − -1.0 V V IC =--50 mA; IB = -5.0 m A − -1.0 V IE = ie = 0; VCB = - 1 0 V; f = 1 MHz − 6.0 pF 240 − VCE=-10V,IC=-1.0mA,f=1.0KHz 40 200 300 MHz 8.0 dB fT transition frequency IC =- 50 mA; VCE = 1 0 V; f = 100 MHz 100 F noise Þgure IC = 200 µA; VCE = 5 V; RS = 1 0 Ω; f =10Hz to 15.7KHz −