CHENMKO ENTERPRISE CO.,LTD CHT3019PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE .019 (0.50) .041 (1.05) .033 (0.85) * HT .066 (1.70) MARKING .110 (2.80) .082 (2.10) .119 (3.04) (1) (3) (2) .055 (1.40) .047 (1.20) .007 (0.177) .045 (1.15) .033 (0.85) 3 CIRCUIT .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .002 (0.05) CONSTRUCTION * NPN Switching Transistor .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. 1 2 SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 120 VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 7.0 V IC collector current (DC) − 1000 mA ICM peak collector current − 1500 mA − 350 mW Tamb ≤ 25 °C; note 1 V Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-9 RATING CHARACTERISTIC CURVES ( CHT3019PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 90 V − 10 nA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 0.1 mA; V CE = 10V IC = 1.0 mA; VCE = 10V 50 90 IC = 150 mA; VCE =10V 100 IC = 500 mA; VCE = 10V IC = 1.0 A; VCE = 10V 50 15 collector-emitter saturation voltage IC = 150 mA; IB = 15 m A − 0.2 V IC =-500 mA; IB = 50 m A − 0.5 V VBEsat base-emitter saturation voltage IC =150 mA; IB =15 mA − 1.1 V Cob collector capacitance − 12 pF C ib emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 60 pF fT transition frequency IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz 100 F noise Þgure IC = 100 µA; VCE = 1 0 V; RS = 1 kΩ; − f = 1.0kHz VCEsat IE = ie = 0; VCB = 1 0 V; f = 1 MHz − − 300 − − − 4.0 MHz dB