CHENMKO ENTERPRISE CO.,LTD CHT5551ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 3.00+0.10 2.0+0.3 MARKING 0.70+0.10 0.70+0.10 2.30+0.1 ZFN 0.9+0.2 2.0+0.3 3.5+0.2 *NPN SILICON Transistor 7.0+0.3 CONSTRUCTION 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base CIRCUIT 3 2 2 Emitter 3 3 Collector ( Heat Sink ) 1 2 SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − collector-emitter voltage open base − 180 160 V VCEO VEBO emitter-base voltage open collector − 6.0 V IC collector current (DC) − 600 mA Ptot total power dissipation − 2.0 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT5551ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 120 V − 50 ICBO collector cut-off current VCB = 120 V,TA=100OC − 50 nA uA IEBO emitter cut-off current VEB=4.0V − 50 nA hFE DC current gain IC = 1.0 mA; V CE = 5V IC = 10mA; VCE = 5V IC = 50 mA; VCE =5V VCEsat VBEsat Cob collector-emitter saturation voltage base-emitter saturation voltage collector capacitance hfe 80 − 80 30 250 − IC = 10 mA; IB = 1.0 m A − 0.15 V IC =-50 mA; IB = 5.0 m A − − 0.2 1.0 V V IC =10mA; IB =1.0mA − 1.0 V − 6.0 pF VCE=10V,IC=1.0mA,f=1.0KHz 50 200 100 IC =-50 mA; IB = 5.0 m A IE = ie = 0; VCB = 1 0 V; f = 1 MHz fT transition frequency IC = 10 mA; VCE = 1 0 V; f = 1.0 MHz F noise Þgure IC = 200 mA; VCE = 5 V; RS = 1 0 Ω; − f =10Hz to 15.7KHz 300 MHz 8.0 dB