S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INFORMATION Package MPQ Leader Size SOT-363 3K 7’ inch REF. A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS 60 V Drain – Gate Voltage RGS＝1MΩ VDGR 60 V Gate – Source Voltage VGS ±20 V Continuous Drain Current ID 115 mA Power Dissipation PD 380 mW RθJA 328 °C / W TJ, TSTG -55~150 °C Maximum Junction-to-Ambient Operating Junction & Storage Temperature Range Note: 1. Pulse Width Limited by Maximum Junction Temperature. http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0, ID=10μA Gate-Threshold Voltage VGS(TH) 1 - 2 V VDS=VGS, ID=250μA IGSS - - ±1 μA VDS=0 , VGS= ±20V - - 1 - - 500 0.5 - - - - 7.5 - - 13.5 80 - - ms Gate-Source Leakage Zero Gate Voltage Drain Current TC= 25°C TC= 125°C On-State Drain Current Drain-Source On Resistance IDSS ID(on) TJ= 25°C TJ= 125°C Forward Transconductance RDS(ON) gFS μA A Ω VDS=60V, VGS=0 VDS=60V, VGS=0 VGS=10V, VDS=7.5V VGS=5V, ID=0.05A VGS=10V, ID=0.5A VDS≧2 VDS(ON), ID= 0.2A Body-Drain Diode Ratings Diode Forward On–Voltage VSD - - -1.5 V Source Current Continuous(Body Diode) IS - - -115 mA Source Current Pulsed ISM - - -800 mA IS=115mA, VGS=0 Dynamic Characteristics Input Capacitance CISS - - 50 Output Capacitance COSS - - 25 Reverse Transfer Capacitance CRSS - - 5 pF VDS=25V, VGS=0, f=1MHz nS VDD=25V, I D=0.5A RL=50Ω, VGEN=10V, RG=25Ω Switching Characteristics Turn-on Delay Time Td(ON) - - 20 Turn-off Delay Time Td(OFF) - - 40 http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 S2N7002DW Elektronische Bauelemente 115mA, 60V Dual N-Channel MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 3