General Purpose Transistor MMBT3904-HF (NPN) RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15) 0.079(2.00) Collector 3 0.002(0.05) 0.071(1.80) 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10) max 0.020(0.50) 0.005(0.20) min 0.012(0.30) 2 Emitter Maximum Ratings Dimensions in inches and (millimeter) (at TA=25°C unless otherwise noted) Symbol Parameter Max Typ Min Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6 V Collector current-Continuous IC 0.2 A Collector dissipation PC 0.2 W RθJA 625 Thermal resistance, junction to ambient Storage temperature and junction temperature Electrical Characteristics Parameter TSTG, TJ -55 O +150 C/W O C (at TA=25°C unless otherwise noted) Conditions Symbol Min Max Unit Collector-Base breakdown voltage IC =100μA , IE=0 V(BR)CBO 60 V Collector-Emitter breakdown voltage IC =1mA , IB=0 V(BR)CEO 40 V Emitter-Base breakdown voltage IE =100μA , IC=0 V(BR)EBO 6 V Collector cut-off current VCB=60V , IE=0 ICBO 0.1 µA Collector cut-off current VCE=30V , VBE(off)=3V ICEX 50 nA Emitter cut-off current VEB=5V , IC=0 IEBO 0.1 µA VCE=1V , IC=10mA hFE(1) 100 60 DC current gain 400 VCE=1V , IC=50mA hFE(2) Collector-Emitter saturation voltage IC=50mA , IB=5mA VCE(sat) 0.3 V Base-Emitter saturation voltage IC=50mA , IB=5mA VBE(sat) 0.95 V VCE=20V , IC=10mA Transition frequency f=100MHZ fT 300 Mhz Delay time VCC=3.0V , VBE=-0.5V td 35 nS Rise time IC=10mA , IB1=1.0mA tr 35 nS Storage time VCC=3.0V , IC=10mA ts 200 nS Fall time IB1=IB2=1.0mA tf 50 nS REV:A Page 1 QW-JTR02 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3904-HF) Fig.2 Collector-Emitter saturation voltage V.S. Collector current VCE=5V 400 oo 125C 300 oo 125C 25C 200 100 oo -40C 125C 0 V B E (s at ) - B a s e -e m i tter v ota l ge (V ) 0.1 1 10 1 100 ß=10 0.15 o 25C 0.05 o -40C 0.1 10 100 Fig.3 Base-Emitter saturatioin voltage V.S. Collector current Fig.4 Base-Emitter ON voltage V.S. Collector current ß=10 -40C 0.8 o 25C 0.6 o 125C 0.4 1 0.1 10 100 1 VCE=5V oo -40C 125C 0.8 oo 25C 125C 0.6 oo 125C 125C 0.4 0.2 0.1 1 10 100 Ic - Collector current (mA) Ic - Collector current (mA) Fig.5 Collector-cutoff current V.S. Ambient temperature Fig.6 Capacitance V.S. Reverse bias voltage 500 10 f=1.0MHz VCB=30V Capacitance (pF) ICBO- Collector current (nA) 1 Ic- Collector current (mA) o 100 125Co 0.10 Ic- Collector current (mA) V BE ( ON )- B a se -e mi t te rv oltag e(V ) hFE- Typical pulsed current gain 500 VCE(sat)- Collector-Emitter voltage(V) Fig.1 Typical pulsed current gain V.S. Collector current 10 1 0.1 5 4 3 Cibo 2 Cobo 25 50 75 100 TA- Ambient temperature (C) 125 o 150 1 0.1 1 10 100 Reverse bias voltage (V) REV:A Page 2 QW-JTR02 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... 10 pitches (min) ....... ....... Start 10 pitches (min) Direction of Feed SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.10 ± 0.10 2.85 ± 0.10 1.40 ± 0.10 1.55 ± 0.10 178 ± 1 50.0 MIN. 13.0 ± 0.20 (inch) 0.122 ± 0.004 0.112 ± 0.004 0.055 ± 0.004 0.061 ± 0.004 7.008 ± 0.04 1.969 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 ± 0.008 0.567 MAX. REV:A Page 3 QW-JTR02 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Park Number Marking Code MMBT3904-HF 1AM 1AM 1 2 Suggested PAD Layout SOT-23 SIZE A (mm) (inch) 0.80 0.031 A D B 0.95 0.037 C 0.95 0.037 D 2.02 0.080 E 3.03 0.120 B E C Standard Packaging Qty per Reel Reel Size (Pcs) (inch) 3000 7 Case Type SOT-23 REV:A Page 4 QW-JTR02 Comchip Technology CO., LTD.