COMCHIP General Purpose Transistors SMD Diodes Specialist MMBT4403-G (PNP) RoHS Device Features SOT-23 0.119(3.00) -Switching transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Marking: 2T 1 2 0.006(0.15) 0.083(2.10) Collector 3 0.002(0.05) 0.066(1.70) 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 1 Base 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) 2 Emitter Dimensions in inches and (millimeter) O Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Value Unit Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -40 V Emitter-Base voltage V EBO -5 V Collector current-continuous IC -0.6 A Collector power dissipation PC 300 mW Junction temperature TJ 150 O C -55 to +150 O C Parameter Storage temperature range T STG O Electrical Characteristics (at Ta=25 C unless otherwise noted) Parameter Symbol Conditions Min Typ. Max Unit Collector-Base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -40 V Collector-Emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-Base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-35V, I E =0 -0.1 μA Collector cut-off current I CEO V CE =-35V, I B =0 -0.1 μA Emitter cut-off current I EBO V EB =-4V, I C =0 -0.1 μA DC current gain h FE V CE =-2V, I C =-150mA 100 300 Collector-Emitter saturation voltage V CE(SAT) I C =-150mA, I B =-15mA -0.4 V Base-Emitter saturation voltage V BE(SAT) I C =-150mA, I B =-15mA -0.95 V Transition frequency fT V CE =-10V, I C =-20mA f=100MHz 200 ΜΗz REV:A Page 1 QW-BTR33 Comchip Technology CO., LTD. COMCHIP General Purpose Transistors SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMBT4403-G) Fig. 2 Typical DC Current Gain vs. Collector Current Fig.1 Max. Power Dissipation vs. Ambient Temperature 300 1000 O 250 h FE , DC Current Gain P D , Power Dissipation (mW) T A =125 C 200 150 100 T A =25 OC O T A =-50 C 10 50 V CE =5.0V 1 0 0 25 50 75 1 100 125 150 175 200 10 1000 I C , Collector Current (mA) Fig. 3 Typical Capacitance Fig. 4 Typical Collector Saturation Region V CE , Collector-Emitter Voltage (V) 1.6 C ibo 10 C obo 1 -0.1 -1.0 -10 I C =10mA I C =300mA 1.2 I C =30mA 0.8 0.4 0 0.001 -50 I C =100mA I C =1mA 0.01 0.1 1 10 100 I B , Base Current (mA) V R , Reverse Voltage (V) Fig. 5 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 6 Base-Emitter Voltage vs. Collector Current 0.5 1.0 I C /I B =10 V BE(ON) , Base-Emitter Voltage (V) V CE(SAT) , Collector-Emitter Saturation Voltage (V) 100 T A , Ambient Temperature ( OC) 30 C T , Capacitance (pF) 100 0.4 T A =25 OC 0.3 O T A =150 C 0.2 T A =-50 OC 0.1 0 1 10 100 1000 V CE =5V O T A =-50 C 0.8 0.6 T A =25 OC 0.4 T A =150 OC 0.2 0.1 I C , Collector Current (mA) 1 10 100 I C , Collector Current (mA) REV:A Page 2 QW-BTR33 Comchip Technology CO., LTD.