General Purpose Transistor 2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 ) 0. 0 14( 0. 36) 0. 043(1. 10) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4. 1 0) case with the type designation MMBT3906-G. Collector 3 0.050(1.270)TYP 2 Base 0. 01 5( 0. 38 ) M ax. °° 0.0 63(1. 60 ) Ma x. 1. Emitter 2. Base 0.104(2.64) 0.096(2.44) 1 2 3 1 Emitter 0.130(3.30) switching and amplifier application. 3. Collector Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Min Max Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current-Continuous IC -0.2 A Collector Dissipation PC 0.625 W +150 O Storage Temperature and Junction Temperature TSTG , TJ -55 C REV:B QW-BTR05 Page 1 General Purpose Transistor Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage IC =-10μA , IE=0 V(BR)CBO -40 V Collector-Emitter breakdown voltage IC =-1mA , IB=0 V(BR)CEO -40 V Emitter-Base breakdown voltage IE =-10μA , IC=0 V(BR)EBO -5 V Collector cut-off current VCB=-40V , IE=0 ICBO -0.1 µA Collector cut-off current VCE=-30V , VBE(off)=-3V ICEX -50 µA Emitter cut-off current VEB=-5V , IC=0 IEBO -0.1 µA VCE=-1V , IC=-10mA hFE(1) 100 VCE=-1V , IC=-50mA hFE(2) 60 VCE=-1V , IC=-100mA hFE(3) 30 DC current gain 400 Collector-Emitter saturation voltage IC=-50mA , IB=-5mA VCE(sat) -0.4 V Base-emitter saturation voltage IC=-50mA , IB=-5mA VBE(sat) -0.95 V VCE=-20V , IC=-10mA fT Transition frequency 250 MHz f=100MHz Delay time VCC=-3V , VBE=-0.5V td 35 nS Rise time IC=-10mA , IB1=-1mA tr 35 nS Storage time VCC=-3V , IC=-10mA ts 225 nS Fall time IB1=IB2=-1mA tf 75 nS Classification of hFE(1) Rank O Y G Range 100-200 200-300 300-400 REV:B QW-BTR05 Page 2 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (2N3906-G) Fig.1 - IC-Vce Fig.2 - Vec-Ic 250u -0.05 200u -0.04 150u -0.03 100u -0.02 ib=50uA -0.01 -0.00 -0 -2 -4 -8 -6 -1.5 -1.0 -0.5 COMMON EMITTER Ta=25°C -0 -0 -10 -0.02 Collector Emitter Voltage, Vce (A) -0.04 -0.08 -0.06 -0.10 Collector Current, IC (A) Fig.4 - hFE-Ic Fig.3 - Vcesat-Ic Vbesat-Ic -2.5 260 240 -2.0 DC Current Gain HFE Collector Emitter Saturation Voltage VCE(sat)-V 600u 300u -0.06 400u 350u Collector-Emitter Voltage, Vce (V) Collector Current, Ic (A) -0.07 ib=200uA -2.0 COMMON EMITTER Ta=25°C 800u 1m 1.2m 1.4 m -0.08 -1.5 -1.0 200 Vce=1v 160 120 80 -0.5 COMMON EMITTER Ta=25°C 40 -0.0 1 4 10 100 0 0 -1 -10 -100 Collector Current, Ic (mA) Collector Current, IC (mA) Fig.5 - PC-Ta Collector Power Dissipation pc , (mW) 800 700 600 500 400 300 200 100 0 0 10 30 50 70 90 110 130 150 Ambient Temperature, Ta (°C) REV:B QW-BTR05 Page 3 General Purpose Transistor Standard Packaging Bag BOX CARTON (EA) (EA) (EA) 1000 10000 100000 Case Type TO-92 REV:B QW-BTR05 Page 4