DC COMPONENTS CO., LTD. 2N7002 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Gate 2 = Source 3 = Drain 3 Absolute Maximum Ratings(TA=25 Characteristic C) 1 Symbol Rating Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS=1MΩ) VDGR 60 V Gate-Source Voltage (Continuous) o VGS (1) Drain Current (Continuous, TC=25 C) ID (2) 20 115 V IDM 800 mA PD 200 1.8 mW o mW/ C Operating Junction Temperature TJ -55 to+150 Maximum Lead Temperature, for 10 Seconds Solding Purpose -55 to+150 TL 260 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) mA Total Power Dissipation o Derate above 25 C TSTG 2 Unit Drain Current (Pulsed) Storage Temperature .108(0.65) .089(0.25) .063(1.60) .055(1.40) o .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) o .026(0.65) .010(0.25) C o C o C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS 60 - - V Test Conditions ID=10µA, VGS=0 Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=60V, VGS=0 Gate-Sourse Forward Leakage Current IGSSF - - 100 nA VGSF=20V, VDS=0 Gate-Sourse Reverse Leakage Current Gate Threshold Voltage (2) (2) On-State Drain Current Static Drain-Source On-State Voltage (2) Static Drain-Source On-State Resistance Forward Transconductance (2) (2) IGSSR - - -100 nA VGSR=-20V, VDS=0 VGS(th) 1 - 2.5 V VDS=2.5V, ID=0.25mA ID(on) 500 - - mA VDS(on)1 - - 0.375 V VDS>2VDS(on), VGS=10V ID=50mA, VGS=5V VDS(on)2 - - 3.75 V ID=500mA, VGS=10V RDS(on)1 - - 7.5 Ω ID=50mA, VGS=5V RDS(on)2 - - 7.5 Ω gFS 80 - - mS Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF Thermal Resistance, Junction to Ambient RθJA - - 625 (1)The Power Dissipation of the package may result in a lower continuous drain current. (2)Pulse Test: Pulse Width 380µs, Duty Cycle 2% o C/W ID=500mA, VGS=10V VDS>2VDS(on), ID=200mA VDS=25V, VGS=0, f=1MHZ -