2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92

2N7000
N−Ch, Enhancement Mode
Field Effect Transistor
TO−92 Type Package
Features:
D High Density Cell Design for Low RDS(ON)
D Voltage Controlled Small Signal Switch
D Rugged and Reliable
D High Saturation Current Capability
D
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain−Gate Voltage (RGS  1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate−Source Voltage, VGS
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Non−Repetitive (tp  50s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Maximum Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Ambient, Rth(JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5C/W
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL . . . . . . . +300C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0V, ID = 10A
60
−
−
V
VDS = 48V,
VGS = 0
−
−
1.0
A
−
−
1.0
mA
OFF Characteristics
Drain−Source Breakdown Voltage
BVDss
Zero−Gate−Voltage Drain Current
IDSS
TJ = +125C
Gate−Body Leakage Current, Forward
IGSSF
VGSF = 15V, VDS = 0
−
−
10
nA
Gate−Body Leakage Current, Reverse
IGSSR
VGSF = −15V, VDS = 0
−
−
−10
nA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
ON Characteristics (Note 1)
Gate Threshold Voltage
VGS(th)
ID = 1mA, VDS = VGS
0.8
2.1
3.0
V
Static Drain−Source ON Resistance
rDS(on)
VGS = 10V,
ID = 500mA
−
1.2
5.0

−
1.9
9.0

VGS = 4.5V, ID = 75mA
−
1.8
5.3

VGS = 10V, ID = 500mA
−
0.6
2.5
V
VGS = 4.5V, ID = 75mA
−
0.14
0.4
V
ID(on)
VGS = 4.5V, VDS = 10V
75
600
−
mA
gFS
VDS = 10V, ID = 200mA
100
320
−
mS
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1MHz
−
20
50
pF
Reverse Transfer Capacitance
Coss
−
11
25
pF
Output Capacitance
Crss
−
4
5
pF
−
−
10
ns
−
−
10
ns
Drain−Source ON−Voltage
ON−State Drain Current
Forward Transconductance
VDS(on)
TJ = +125C
Dynamic Characteristics
Turn−On Time
ton
Turn−Off Time
toff
VDD = 15V, RL = 25,
ID = 500mA, VGS = 10V,
RGEN = 25
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445)
Dia Max
S G D
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max