OM6025SA OM6026SA POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE 400V, 500V, N-Channel, Up To 24 Amp Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package Size 6 Die, High Energy Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS PART NUMBER OM6025SA OM6026SA VDS 400 500 SCHEMATIC 4 11 R0 3.1 - 93 RDS(on) .23 .30 ID (Amp) 24 22 3.1 OM6025SA - OM6026SA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6025SA OM6026SA Units VDS Drain-Source Voltage 400 500 VDGR Drain-Gate Voltage (RGS = 1 M ) 400 500 V ID @ TC = 25°C Continuous Drain Current2 24 22 A IDM Pulsed Drain Current2 92 85 A PD @ TC = 25°C Maximum Power Dissipation 165 165 W Derate Above 25°C Ambient .025 .025 W/°C 1000 1200 mJ -55 to 150 -55 to 150 °C 275 275 °C WDSS (1) (2) V Single Pulse Energy Drain To Source @ 25°C TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/8" from case for 5 secs.) Note 1: VDD = 50V, ID = as noted Note 2: Package Pin Limitation ID @ TC = 25°C = 25 Amps THERMAL RESISTANCE (MAXIMUM) at TA = 25°C RthJC Junction-to-Case .76 °C/W RthJA Junction-to-Ambient 40 °C/W Derate Above 25°C Case 1.32 3.1 3.1 - 94 W/°C Free Air Operation (ID = 11 A, TJ = 125° C) 3.1 - 95 f = 1.0 MHz) Output Capacitance VGS = 10 V) Gate-Source Charge * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance trr ton Reverse Recovery Time VSD (IS = 22A, d/dt = 100 A/µs) - - - Qgd Forward Turn-On Time - - - - - - Qgs Qg tf Td(off) tr td(on) - Crss - Ciss 11 - - - 1.5 2.0 - - Coss Forward On-Voltage SOURCE DRAIN DIODE CHARACTERISTICS Gate-Drain Charge (VDS = 400 V, ID = 22 A, VGS = 10 V Rgen = 4.3 ohms) (VDD = 250 V, ID = 22 A, Total Gate Charge Fall Time Turn-Off Delay Time Rise Time Turn-On Delay Time SWITCHING CHARACTERISTICS Transfer Capacitance (VDS = 25 V, VGS = 0, Input Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc) gFS VDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 22 A) rDS(on) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc) (TJ = 125° C) (VDS = VGS, ID = 0.25 mAdc Gate-Threshold Voltage VGS(th) IGSSR Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) ON CHARACTERISTICS* IGSSF - Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) - 500 (VDS = 500 V, VGS = 0) IDSS V(BR)DSS Min. (VDS = 500 V, VGS = 0, TJ = 125° C) Zero Gate Voltage Drain Symbol OM6026SA (TC = 25° unless otherwise noted) Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS: 140 - 1.6 160 115 20 60 1.1 500 1000 - 160 ** - 70 - 200 190 - 680 - 5600 8.0 - 4.0 3.0 8.0 100 - - 100 - 3.5 1.0 - 0.30 0.25 - - - - - Max. Typ. ns Vdc nC ns pF mhos Vdc Ohm Vdc nAdc nAdc mAdc Vdc Unit OM6025SA f = 1.0 MHz) (VDS = 25 V, VGS = 0, VGS = 10 V) (VDS = 400 V, ID = 24 A, Rgen = 4.3 ohms) (VDD = 250 V, ID = 24 A, Reverse Recovery Time Forward Turn-On Time Forward On-Voltage (IS = 24 A, d/dt = 100 A/µs) SOURCE DRAIN DIODE CHARACTERISTICS Gate-Drain Charge Gate-Source Charge Total Gate Charge Fall Time Turn-Off Delay Time Rise Time Turn-On Delay Time SWITCHING CHARACTERISTICS Transfer Capacitance Output Capacitance Input Capacitance DYNAMIC CHARACTERISTICS Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) (ID = 12 A, TJ = 125° C) (ID = 24 A) Drain-Source On-Voltage (VGS = 10 Vdc) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) (TJ = 125° C) (VDS = VGS, ID = 0.25 mAdc Gate-Threshold Voltage ON CHARACTERISTICS* Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) trr ton VSD Qgd Qgs Qg tf td(off) tr td(on) Crss Coss Ciss gFS VDS(on) rDS(on) VGS(th) IGSSR IGSSF IDSS V(BR)DSS Symbol - - - - - - - - - - - - 14 - - - 1.5 2.0 - - - - 400 Min. (TC = 25° unless otherwise noted) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) (VDS = 400 V, VGS = 0, TJ = 125° C) (VDS = 400 V, VGS = 0) Zero Gate Voltage Drain Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS: 500 ** 1.1 55 20 110 160 160 190 70 230 78 5600 - - - - - 3.0 - - - - - Typ. 1000 1.6 - - 140 - - - - - - - - 5.6 5.6 0.23 3.5 4.0 100 100 1.0 0.25 - Max. ns Vdc nC ns pF mhos Vdc Ohm Vdc nAdc nAdc mAdc Vdc Unit OM6025SA - OM6026SA 3.1 OM6025SC - OM6026SC PIN CONNECTION MECHANICAL OUTLINE .940 .260 MAX .740 .540 .200 .100 2 PLCS. .040 .250 .290 1 2 3 .125 DIA. 2 PLS. .540 .125 2 PLCS. .500 MIN. 1.1 1.2 Pin 1: Drain Pin 2: Source Pin 3: Gate .150 .040 DIA. 3 PLCS. .150 .300 M-3S 1.3 1.4 .545 .535 .144 DIA. .050 .040 1.5 .685 .665 1 2.1 3.1 2 .800 .790 .550 .530 3 .550 .510 Pin 1: Drain Pin 2: Source Pin 3: Gate .005 .045 .035 .150 TYP. .150 TYP. 2.3 M-PAK 2.4 PACKAGE OPTIONS .260 .249 3.1 MOD PAK 3.2 Z-TAB 6 PIN SIP NOTES: • Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. • MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246