DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features L • 16,777,216 words by 64 bits organization • Clock frequency and access time from CLK Part number MC-4516CB647EF-A75 MC-4516CB647XF-A75 Clock frequency Access time from CLK (MAX.) (MAX.) CL = 3 133 MHz 5.4 ns CL = 2 100 MHz 6.0 ns u od Pr MC-4516CB647PF-A75 /CAS latency CL = 3 133 MHz 5.4 ns CL = 2 100 MHz 6.0 ns CL = 3 133 MHz 5.4 ns CL = 2 100 MHz 6.0 ns ct • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0 and BA1 (Bank Select) • Programmable burst-length (1, 2, 4, 8 and full page) • Programmable wrap sequence (sequential / interleave) • Programmable /CAS latency (2, 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • All DQs have 10 Ω ±10 % of series resistor • Single 3.3 V ± 0.3 V power supply • LVTTL compatible • 4,096 refresh cycles/64 ms • Burst termination by Burst Stop command and Precharge command • 168-pin dual in-line memory module (Pin pitch = 1.27 mm) • Unbuffered type • Serial PD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information. Document No. E0058N20 (Ver. 2.0) Date Published March 2001 CP (K) Printed in Japan This product became EOL in September, 2002. Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC-4516CB647 Ordering Information Part number Clock frequency Package Mounted devices (MAX.) MC-4516CB647EF-A75 133 MHz MC-4516CB647PF-A75 168-pin Dual In-line Memory Module 8 pieces of µPD45128841G5 (Rev. E) (Socket Type) (10.16 mm (400) TSOP (II)) Edge connector : Gold plated 8 pieces of µPD45128841G5 (Rev. P) 34.93 mm height (10.16 mm (400) TSOP (II)) 8 pieces of µPD45128841G5 (Rev. X) MC-4516CB647XF-A75 L EO (10.16 mm (400) TSOP (II)) ct u od Pr 2 Data Sheet E0058N20 MC-4516CB647 Pin Configuration 168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated) EO 85 86 87 88 89 90 91 92 93 94 VSS DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 1 2 3 4 5 6 7 8 9 10 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 NC NC VSS NC NC Vcc /WE DQMB0 DQMB1 /CS0 NC VSS A0 A2 A4 A6 A8 A10 BA1 (A12) Vcc 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Vcc CLK0 VSS NC /CS2 DQMB2 DQMB3 NC Vcc NC NC NC NC VSS DQ16 DQ17 DQ18 DQ19 Vcc DQ20 NC NC NC VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC WP SDA SCL Vcc 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 VSS DQ32 DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 NC NC VSS NC NC Vcc /CAS DQMB4 DQMB5 NC /RAS VSS A1 A3 A5 A7 A9 BA0 (A13) A11 Vcc 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 CLK1 NC VSS CKE0 NC DQMB6 DQMB7 NC Vcc NC NC NC NC VSS DQ48 DQ49 DQ50 DQ51 Vcc DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 VSS CLK3 NC SA0 SA1 SA2 Vcc L 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 /xxx indicates active low signal. u od Pr A0 - A11 : Address Inputs [Row: A0 - A11, Column: A0 - A9] BA0 (A13), BA1 (A12) : SDRAM Bank Select : Data Inputs/Outputs CLK0 - CLK3 : Clock Input CKE0 : Clock Enable Input /CS0, /CS2 : Chip Select Input /RAS : Row Address Strobe /CAS : Column Address Strobe /WE : Write Enable DQMB0 - DQMB7 : DQ Mask Enable SA0 - SA2 : Address Input for EEPROM SDA : Serial Data I/O for PD SCL : Clock Input for PD VCC VSS WP NC Data Sheet E0058N20 ct DQ0 - DQ63 : Power Supply : Ground : Write Protect : No Connection 3 MC-4516CB647 Block Diagram /WE /CS0 /CS2 DQMB0 DQMB2 EO DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D0 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D1 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 24 DQ 25 DQ 26 DQ 27 DQ 28 DQ 29 DQ 30 DQ 31 DQMB4 DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47 CLK0 CLK2 DQ 4 DQM /CS DQ 7 DQ 6 DQ 5 D4 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D6 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D7 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQMB7 DQ 5 DQM /CS DQ 7 DQ 6 DQ 4 D5 DQ 3 DQ 2 DQ 1 DQ 0 /WE DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63 CLK : D0, D1, D4, D5 3.3 pF A0 - A11 CLK : D2, D3, D6, D7 3.3 pF CLK1, CLK3 /WE u od Pr DQMB5 DQ 4 DQM /CS DQ 7 DQ 6 DQ 5 D3 DQ 3 DQ 2 DQ 1 DQ 0 DQMB6 L DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39 /WE DQMB3 DQMB1 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D2 DQ 3 DQ 2 DQ 1 DQ 0 10 pF A0 - A11 : D0 - D7 BA0 A13 : D0 - D7 BA1 A12 : D0 - D7 /RAS /RAS : D0 - D7 /CAS /CAS : D0 - D7 CKE0 CKE : D0 - D7 SERIAL PD ct SDA VCC SCL D0 - D7 C VSS A0 A1 A2 D0 - D7 47 kΩ SA0 SA1 SA2 Remarks 1. The value of all resistors is 10 Ω except WP. 2. D0 - D7: µPD45128841 (4M words × 8 bits × 4 banks) 4 WP Data Sheet E0058N20 MC-4516CB647 Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Rating Unit VCC –0.5 to +4.6 V VT –0.5 to +4.6 V Short circuit output current IO 50 mA Power dissipation PD 8 W Operating ambient temperature TA 0 to 70 °C Storage temperature Tstg –55 to +125 °C Voltage on power supply pin relative to GND EO Voltage on input pin relative to GND Caution Condition Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating L conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter High level input voltage Low level input voltage Operating ambient temperature Condition MIN. TYP. MAX. Unit VCC 3.0 3.3 3.6 V VIH 2.0 VCC + 0.3 V VIL −0.3 +0.8 V TA 0 70 °C MAX. Unit pF u od Pr Supply voltage Symbol Capacitance (TA = 25 °C, f = 1 MHz) Parameter Input capacitance Data input/output capacitance Symbol Test condition MIN. TYP. CI1 A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE 24 62 CI2 CLK0, CLK2 20 40 CI3 CKE0 28 52 CI4 /CS0, /CS2 15 29 CI5 DQMB0 - DQMB7 3 13 CI/O DQ0 - DQ63 4 13 pF ct Data Sheet E0058N20 5 MC-4516CB647 DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Operating current Precharge standby current in power down mode Precharge standby current in non power down mode EO Active standby current in power down mode Active standby current in Symbol ICC1 ICC2P ICC2N Burst length = 1 /CAS latency = 2 800 tRC ≥ tRC(MIN.), IO = 0 mA /CAS latency = 3 840 CKE ≤ VIL(MAX.), tCK = 15 ns ICC3P 160 mA 1 mA mA 64 CKE ≤ VIL(MAX.), tCK = 15 ns 40 ICC3PS CKE ≤ VIL(MAX.), tCK = ∞ ICC3N Unit Notes 8 CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.), Input signals are changed one time during 30 ns. mA 32 CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.), 240 mA Input signals are changed one time during 30 ns. ICC3NS ICC4 CKE ≥ VIH(MIN.), tCK = ∞ Input signals are stable. ICC5 ICC6 160 tCK ≥ tCK(MIN.) /CAS latency = 2 960 IO = 0 mA /CAS latency = 3 1,240 tRC ≥ tRC(MIN.) /CAS latency = 2 1,840 /CAS latency = 3 1,920 L Self refresh current 8 ICC2NS CKE ≥ VIH(MIN.), tCK = ∞ Input signals are stable. (Burst mode) CBR (Auto) refresh current MIN. MAX. ICC2PS CKE ≤ VIL(MAX.), tCK = ∞ non power down mode Operating current Test condition CKE ≤ 0.2 V II(L) VI = 0 to 3.6 V, All other pins not under test = 0 V Output leakage current IO(L) DOUT is disabled, VO = 0 to 3.6 V High level output voltage VOH IO = – 4.0 mA Low level output voltage VOL IO = + 4.0 mA 2 mA 3 16 mA –8 +8 µA – 1.5 + 1.5 µA u od Pr Input leakage current mA 2.4 V 0.4 V Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.). 2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.). 3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.). ct 6 Data Sheet E0058N20 MC-4516CB647 AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Test Conditions Parameter AC high level input voltage / low level input voltage Input timing measurement reference level Transition time (Input rise and fall time) Output timing measurement reference level Value Unit 2.4 / 0.4 V 1.4 V 1 ns 1.4 V CLK tCL 2.4 V 1.4 V 0.4 V tSETUP tHOLD Input 2.4 V 1.4 V L EO tCK tCH 0.4 V tAC tOH Output ct u od Pr Data Sheet E0058N20 7 MC-4516CB647 Synchronous Characteristics Parameter Symbol Clock cycle time Access time from CLK -A75 Unit MIN. MAX. /CAS latency = 3 tCK3 7.5 (133 MHz) ns /CAS latency = 2 tCK2 10 (100 MHz) ns /CAS latency = 3 tAC3 5.4 ns 1 /CAS latency = 2 tAC2 6.0 ns 1 CLK high level width 2.5 ns CLK low level width tCL 2.5 ns Data-out hold time tOH 3.0 ns Data-out low-impedance time tLZ 0 ns /CAS latency = 3 tHZ3 3.0 5.4 ns /CAS latency = 2 tHZ2 3.0 6.0 ns Data-in setup time tDS 1.5 ns Data-in hold time tDH 0.8 ns Address setup time tAS 1.5 ns Address hold time tAH 0.8 ns CKE setup time tCKS 1.5 ns CKE hold time tCKH 0.8 ns CKE setup time (Power down exit) tCKSP 1.5 ns Command (/CS0, /CS2, /RAS, /CAS, /WE, tCMS 1.5 ns tCMH 0.8 ns EO tCH Data-out high-impedance time L Command (/CS0, /CS2, /RAS, /CAS, /WE, DQMB0 - DQMB7) hold time Note 1. Output load 1 u od Pr DQMB0 - DQMB7) setup time Note Z = 50 Ω Output 50 pF Remark These specifications are applied to the monolithic device. ct 8 Data Sheet E0058N20 MC-4516CB647 Asynchronous Characteristics Parameter Symbol -A75 MIN. Unit Note MAX. tRC 67.5 ns REF to REF/ACT command period (refresh) tRC1 67.5 ns ACT to PRE command period tRAS 45 PRE to ACT command period tRP 20 ns Delay time ACT to READ/WRITE command tRCD 20 ns ACT(one) to ACT(another) command period tRRD 15 ns Data-in to PRE command period tDPL 8 ns EO ACT to REF/ACT command period (operation) 120,000 ns Data-in to ACT(REF) command /CAS latency = 3 tDAL3 1CLK+22.5 ns 1 period (Auto precharge) /CAS latency = 2 tDAL2 1CLK+20 ns 1 tRSC 2 CLK tT 0.5 Mode register set cycle time Transition time Refresh time (4,096 refresh cycles) tREF 30 ns 64 ms L Note This device can satisfy the tDAL3 spec of 1CLK+20 ns for up to and including 125 MHz operation. ct u od Pr Data Sheet E0058N20 9 MC-4516CB647 Serial PD (1/2) Byte No. Function Described Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes Defines the number of bytes written into serial PD memory 80H 1 0 0 0 0 0 0 0 128 bytes 1 Total number of bytes of serial PD memory 08H 0 0 0 0 1 0 0 0 256 bytes 2 Fundamental memory type 04H 0 0 0 0 0 1 0 0 SDRAM 3 Number of rows 0CH 0 0 0 0 1 1 0 0 12 rows 4 Number of columns 0AH 0 0 0 0 1 0 1 0 10 columns 5 Number of banks 01H 0 0 0 0 0 0 0 1 1 bank 6 Data width 40H 0 1 0 0 0 0 0 0 64 bits 7 Data width (continued) 00H 0 0 0 0 0 0 0 0 0 8 Voltage interface 01H 0 0 0 0 0 0 0 1 LVTTL 9 CL = 3 Cycle time 75H 0 1 1 1 0 1 0 1 7.5 ns 10 CL = 3 Access time 54H 0 1 0 1 0 1 0 0 5.4 ns 11 DIMM configuration type 00H 0 0 0 0 0 0 0 0 None 12 Refresh rate/type 80H 1 0 0 0 0 0 0 0 Normal 13 SDRAM width 08H 0 0 0 0 1 0 0 0 ×8 0 0 0 0 0 0 0 0 None L EO 0 Error checking SDRAM width 15 Minimum clock delay 01H 0 0 0 0 0 0 0 1 1 clock 16 Burst length supported 8FH 1 0 0 0 1 1 1 1 1, 2, 4, 8, F 17 Number of banks on each SDRAM 04H 0 0 0 0 0 1 0 0 4 banks 18 /CAS latency supported 06H 0 0 0 0 0 1 1 0 2, 3 19 /CS latency supported 20 /WE latency supported 21 SDRAM module attributes 22 u od Pr 14 00H 01H 0 0 0 0 0 0 0 1 0 01H 0 0 0 0 0 0 0 1 0 00H 0 0 0 0 0 0 0 0 SDRAM device attributes : General 0EH 0 0 0 0 1 1 1 0 23 CL = 2 Cycle time A0H 1 0 1 0 0 0 0 0 10 ns 24 CL = 2 Access time 6 ns 25-26 27 tRP(MIN.) 28 tRRD(MIN.) 29 tRCD(MIN.) 30 tRAS(MIN.) 31 Module bank density 60H 0 1 1 0 0 0 0 0 00H 0 0 0 0 0 0 0 0 14H 0 0 0 1 0 1 0 0 20 ns 0FH 0 0 0 0 1 1 1 1 15 ns 14H 0 0 0 1 0 1 0 0 20 ns 2DH 0 0 1 0 1 1 0 1 45 ns 20H 0 0 1 0 0 0 0 0 128M bytes ct 10 Data Sheet E0058N20 MC-4516CB647 (2/2) Byte No. Function Described Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes 32 Command and address signal input setup time 15H 0 0 0 1 0 1 0 1 1.5 ns 33 Command and address signal input 08H 0 0 0 0 1 0 0 0 0.8 ns hold time 34 Data signal input setup time 15H 0 0 0 1 0 1 0 1 1.5 ns 35 Data signal input hold time 08H 0 0 0 0 1 0 0 0 0.8 ns 00H 0 0 0 0 0 0 0 0 EO 36-61 62 SPD revision 12H 0 0 0 1 0 0 1 0 63 Checksum for bytes 0 - 62 AFH 1 0 1 0 1 1 1 1 64-71 72 1.2 Manufacture’s JEDEC ID code Manufacturing location Manufacture’s P/N 91-92 Revision code 93-94 Manufacturing date 95-98 Assembly serial number 99-125 Mfg specific L 73-90 126 Intel specification frequency 64H 0 1 1 0 0 1 0 0 127 Intel specification /CAS latency support A7H 1 0 1 0 0 1 1 1 u od Pr Timing Chart Refer to the µPD45128441, 45128841, 45128163 Data sheet (E0031N). ct Data Sheet E0058N20 11 MC-4516CB647 Package Drawing 168-PIN DUAL IN-LINE MODULE (SOCKET TYPE) A (AREA B) Y1 Y2 R2 Z1 Z2 N F2 F1 EO Q R1 L A B H S (OPTIONAL HOLES) K C J I B G U T E D A1 (AREA A) L ITEM M2 (AREA A) MILLIMETERS A 133.35 A1 133.35±0.13 B 11.43 C D 36.83 6.35 D1 D2 2.0 3.125 E 54.61 F1 2.44 F2 G 3.18 6.35 H 1.27 (T.P.) u od Pr M1 (AREA B) M detail of A part detail of B part D2 W V P X D1 I 8.89 J 24.495 K L 42.18 17.78 M 34.93±0.13 M1 M2 15.15 19.78 N P 3.0 MAX. 1.0 Q R2.0 R1 4.0±0.10 R2 S φ 3.0 9.53 T 1.27±0.1 U 4.0 MIN. 0.2±0.15 1.0±0.05 2.54±0.10 3.0 MIN. Y2 2.26 ct V W X Y1 12 Data Sheet E0058N20 Z1 3.0 MIN. Z2 2.26 M168S-50A110 MC-4516CB647 [ MEMO ] L EO ct u od Pr Data Sheet E0058N20 13 MC-4516CB647 [ MEMO ] L EO ct u od Pr 14 Data Sheet E0058N20 MC-4516CB647 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using EO insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided L to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and 3 u od Pr related specifications governing the devices. STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. ct Data Sheet E0058N20 15 MC-4516CB647 CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. EO L • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of Elpida's data sheets or data books, etc., for the most up-to-date specifications of Elpida semiconductor products. Not all products and/or types are available in every country. Please check with an Elpida Memory, Inc. for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of Elpida. Elpida assumes no responsibility for any errors that may appear in this document. • Elpida does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of Elpida semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. Elpida assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While Elpida endeavours to enhance the quality, reliability and safety of Elpida semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in Elpida semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • Elpida semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of Elpida semiconductor products is "Standard" unless otherwise expressly specified in Elpida's data sheets or data books, etc. If customers wish to use Elpida semiconductor products in applications not intended by Elpida, they must contact an Elpida Memory, Inc. in advance to determine Elpida's willingness to support a given application. (Note) (1) "Elpida" as used in this statement means Elpida Memory, Inc. and also includes its majority-owned subsidiaries. (2) "Elpida semiconductor products" means any semiconductor product developed or manufactured by or for Elpida (as defined above). ct u od Pr M8E 00. 4