EPIGAP ELD-810-095-4

LED - Lamp
ELD-810-095-4
16.11.2007
rev. 05
Radiation
Type
Technology
Case
Infrared
DDH
AlGaAs/AlGaAs
TO-46
Description
High-power, high-speed infrared LED in
hermetically sealed TO-46 package, mounted on
reflector header for beam forming
Ø 0,45 ± 0.04
Ø 5,40 ± 0,1
0,60 ± 0,15
Note: Special packages with standoff available on request
Ø 4,65 ± 0,08
2,54 ± 0,15
0,28
Cathode
Ø 4,0 ± 0,1
Applications
Anode
Chip Location
1,2
27,0 ± 1,6
2,8 ± 0,15
Optical communications, safety equipment,
automation, optical sensors, encoders
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Test сonditions
Parameter
Symbol
Value
Unit
IF
100
mA
IFM
200
mA
PD
220
mW
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-55 to +100
°C
Junction temperature
TJ
100
°C
Typ
Max
Unit
VF
1.6
1.9
V
1.7
2.1
V
Forward current (DC)
(tP ≤ 50 µs, tP /T = 1/2)
Peak forward current
Power dissipation
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
IF = 20 mA
Forward voltage
Symbol
Min
Forward voltage*
IF = 100 mA
VF
Reverse voltage
IR = 10 µA
VF
5
Radiant power
IF = 20 mA
Φe
1.8
Radiant power*
IF = 100 mA
Radiant intensity*
V
2.2
mW
Φe
10
mW
IF = 100 mA
Ιe
8
mW/sr
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth at 50%
IF = 100 mA
∆λ0.5
35
nm
Viewing angle
IF = 100 mA
ϕ
90
deg.
Switching time
IF = 100 mA
tr, tf
40
ns
800
810
820
nm
*measured after 30s current flow
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545