LED - Lamp ELD-810-095-4 16.11.2007 rev. 05 Radiation Type Technology Case Infrared DDH AlGaAs/AlGaAs TO-46 Description High-power, high-speed infrared LED in hermetically sealed TO-46 package, mounted on reflector header for beam forming Ø 0,45 ± 0.04 Ø 5,40 ± 0,1 0,60 ± 0,15 Note: Special packages with standoff available on request Ø 4,65 ± 0,08 2,54 ± 0,15 0,28 Cathode Ø 4,0 ± 0,1 Applications Anode Chip Location 1,2 27,0 ± 1,6 2,8 ± 0,15 Optical communications, safety equipment, automation, optical sensors, encoders Maximum Ratings Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit IF 100 mA IFM 200 mA PD 220 mW Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -55 to +100 °C Junction temperature TJ 100 °C Typ Max Unit VF 1.6 1.9 V 1.7 2.1 V Forward current (DC) (tP ≤ 50 µs, tP /T = 1/2) Peak forward current Power dissipation Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 20 mA Forward voltage Symbol Min Forward voltage* IF = 100 mA VF Reverse voltage IR = 10 µA VF 5 Radiant power IF = 20 mA Φe 1.8 Radiant power* IF = 100 mA Radiant intensity* V 2.2 mW Φe 10 mW IF = 100 mA Ιe 8 mW/sr Peak wavelength IF = 100 mA λp Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 35 nm Viewing angle IF = 100 mA ϕ 90 deg. Switching time IF = 100 mA tr, tf 40 ns 800 810 820 nm *measured after 30s current flow Note: All measurements carried out on EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545