SMD-LED ELS-740-994 16.11.2007 rev. 05 Radiation Type Technology Case Infrared SMD AlGaAs/AlGaAs TOPLED Description 2,8 ± 0,2 2,2 ± 0,1 High-power, high speed LED in TOPLED PLCC-2 package, compact design allows for easy circuit board mounting and assembling of arrays 1,9 ± 0,2 Cathode 3,5 ± 0,2 3,1 ± 0,2 Ø 2,4 ± 0,2 1 0,8 2 Applications Anode 0,15 2 0,5 ± 0,2 Optical communications, remote control, light barriers, measurement applications and security systems, automation ELC-67 Anode Absolute Maximum Ratings at Tamb = 25°C, unless otherwise specified Parameter Test сonditions DC forward current Symbol Value Unit IF 50 mA Peak forward current tp ≤ 50 µs, tp/T ≤ 0.5 IFM 100 mA Surge forward current tp ≤ 10 µs ISFM 1000 mA P 125 mW Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +90 °C Typ Max Unit 2.0 2.5 V Power dissipation Electrical and Optical Characteristics at Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF =50 mA VF Reverse voltage IF = 100 µA VR 5 Radiant power IF = 50 mA Φe 5.0 6.5 Peak wavelength IF = 50 mA λp 730 740 Spectral bandwidth at 50% IF = 50 mA ∆λ0.5 30 nm Viewing angle IF = 50 mA ϕ 120 deg. Switching time IF = 50 mA tr , t f 30 ns V mW 750 nm Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545