2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR Equivalent circuit schematic Ratings 230 230 40 ±160 ±30 40 633.1 27 Unit V V A A V A mJ mJ Remarks VGS=-30V Gate(G) Note *1 Note *2 Note *3 dV DS /dt dV/dt PD Tch Tstg 20 5 270 2.02 +150 -55 to +150 Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Source(S) Note *1:Tch< = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=16A,L=4.09mH, VCC=48V,RG=50Ω kV/µs VDS= < 230V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Turn-Off Time toff Drain(D) EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. < < Note *4:IF< = -ID, -di/dt=50A/µs,VCC= BVDSS,Tch= 150°C Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS =230V VGS=0V Tch=25°C Tch=125°C VDS =184V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V Min. Typ. 230 3.0 12 VDS =75V VGS=0V f=1MH VCC=180V ID=20A VGS=10V RGS=10 Ω V CC=115V ID=40A VGS=10V IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C Max. 5.0 25 250 100 76 58 24 1880 2820 230 345 12 18 28 42 8.4 12.6 56 84 6 9 42.0 63.0 18.0 27.0 12.0 18.0 1.10 1.50 230 2.5 Units V V µA nA mΩ S pF ns nC V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.463 75 Units °C/W °C/W 1 2SK3872-01L,S,SJ FUJI POWER MOSFET Characteristics 400 Allowable Power Dissipation PD=f(Tc) 100 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 90 20V 10V 80 300 70 8V ID [A] PD [W] 60 200 50 40 7V 30 100 6.5V 20 10 VGS=5.5V 0 0 0 25 50 75 100 125 150 0 4 8 12 Tc [°C] 100 16 20 24 VDS [V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 0.25 VGS=6V 100 ID [A] 0.25 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V 7V 6.5V 0.20 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.20 8V 0.15 0.10 0.15 max. 0.10 10V typ. 20V 0.05 0.05 0.00 0.00 0 10 20 30 40 ID [A] 50 60 70 80 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3872-01L,S,SJ FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 20 Typical Gate Charge Characteristics VGS=f(Qg):ID=40A,Tch=25°C 6.5 18 6.0 16 5.5 max. VGS(th) [V] 5.0 14 Vcc= 46V 4.5 115V 12 VGS [V] 4.0 3.5 min. 3.0 184V 10 8 2.5 6 2.0 1.5 4 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 Tch [°C] 10n 40 50 60 70 80 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Ciss 1n 10 IF [A] 100p 1 Crss 10p 1p -1 10 10 0 1 2 10 10 0.1 0.00 3 10 0.25 0.50 0.75 3 10 1.00 1.25 1.50 1.75 2.00 VSD [V] VDS [V] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A 700 Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10Ω IAS=16A 600 500 2 10 td(off) EAV [mJ] IAS=24A td(on) t [ns] C [F] Coss 400 300 IAS=40A tf 1 10 200 tr 100 0 0 10 -1 10 0 10 10 ID [A] 1 2 10 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3872-01L,S,SJ 2 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V 2 10 Safe operating area ID=f(VDS):Single Pulse,Tc=25°C t= 1µs Avalanche Current I AV [A] Single Pulse 10µs 1 10 D.C. 1 10 ID [A] 100µs 0 10 1ms 0 10 10ms -1 10 100ms 10 -2 10 -8 10 -1 0 10 -7 -6 10 10 -5 -4 10 10 -3 10 -2 10 10 2 10 10 10 3 VDS [V] tAV [sec] 1 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 10 -4 10 -3 10 -2 -1 0 10 10 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/fdt/scd/ 4