FUJI 2SK2896

2SK2896-01L,S
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
T-pack(S)
T-pack(L)
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Equivalent circuit schematic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
V DS
ID
ID[puls]
VGS
EAV
PD
Tch
Tstg
Rating
60
±45
±180
±20
461.9
60
+150
Unit
V
A
A
V
mJ
W
°C
°C
-55 to +150
Remarks
Drain(D)
Gate(G)
*1
Source(S)
*1 L=0.304mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Symbol
V(BR)DSS
VGS(th)
IDSS
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=60V
VGS=0V
Gate-source leakage current
Drain-source on-state resistance
IGSS
RDS(on)
VGS=±20V VDS=0V
ID=22.5A VGS=10V
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
V SD
t rr
Qrr
ID=22.5A
VDS=25V
VDS =25V
VGS=0V
f=1MHz
VCC=30V RG=10 Ω
ID=45A
VGS=10V
15
L=100µH
45
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Tch=25°C
60
1.0
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
IF=45A VGS=0V Tch=25°C
IF=45A VGS=0V
-di/dt=100A/µs Tch=25°C
Typ.
1.5
10
0.2
10
15
10
35
2900
930
260
13
35
190
75
0.95
55
0.10
Max.
2.0
500
1.0
100
20
12
Units
V
V
µA
mA
nA
mΩ
S
4350
1400
390
30
50
290
140
1.43
pF
ns
A
V
ns
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max.
Units
2.08
125.0
°C/W
°C/W
1
FUJI POWER MOSFET
2SK2896-01L,S
Characteristics
2
FUJI POWER MOSFET
2SK2896-01L,S
3
FUJI POWER MOSFET
2SK2896-01L,S
4