2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR Equivalent circuit schematic Ratings 600 600 9 ±36 ±30 9 462.3 16.5 Unit V V A A V A mJ mJ Remarks VGS=-30V Gate(G) Note *1 Note *2 Note *3 dV DS /dt dV/dt PD Tch Tstg 20 5 165 1.67 +150 -55 to +150 Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Source(S) Note *1:Tch< = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH, VCC=60V,RG=50Ω kV/µs VDS= < 600V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Turn-Off Time toff Drain(D) EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF< = 150°C = BVDSS,Tch< = -ID, -di/dt=50A/µs,VCC< Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =600V VGS=0V Tch=125°C VDS =480V VGS=0V VGS=±30V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS =25V VGS=0V f=1MH VCC=300V ID=4.5A VGS=10V Min. Typ. 600 3.0 4.5 RGS=10 Ω V CC=300V ID=9A VGS=10V IF=9A VGS=0V Tch=25°C IF=9A VGS=0V -di/dt=100A/µs Tch=25°C Max. 5.0 25 250 100 1.00 0.82 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12.0 1.10 1.50 860 7.0 Units V V µA nA Ω S pF ns nC V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.758 75 Units °C/W °C/W 1 2SK3889-01L,S,SJ FUJI POWER MOSFET Characteristics 200 Allowable Power Dissipation PD=f(Tc) 20 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 20V 10V 180 8.0V 160 15 140 ID [A] PD [W] 120 100 6.5V 10 80 60 5 6.0V 40 20 VGS=5.5V 0 0 0 25 50 75 100 125 0 150 5 10 15 20 25 30 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 100 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 2.0 VGS=5.5V 6.0V 100 3.00 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 6.5V 2.75 2.50 2.25 8.0V 10V 20V 1.0 2.00 RDS(on) [ Ω ] RDS(on) [ Ω ] 1.5 1.75 1.50 max. 1.25 1.00 typ. 0.5 0.75 0.50 0.25 0.0 0.00 0 5 10 ID [A] 15 20 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3889-01L,S,SJ 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25 °C 6.5 12 6.0 Vcc= 120V 5.5 300V max. 10 480V 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 Tch [°C] 4 10 30 40 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Ciss 3 10 IF [A] C [pF] 10 Coss 2 10 1 1 10 Crss 0 0.1 0.00 10 -1 10 0 1 10 2 10 10 10 3 0.25 0.50 1.00 1.25 1.50 VSD [V] VDS [V] 3 0.75 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω 500 10 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V IAS=3.6A 450 400 350 2 10 IAS=5.4A tf EAV [mJ] 300 t [ns] td(off) td(on) 250 IAS=9A 200 1 10 150 tr 100 50 0 0 10 -1 10 0 10 10 ID [A] 1 2 10 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3889-01L,S,SJ 2 Avalanche Current I AV [A] 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=60V Single Pulse 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 -5 10 10 -4 10 -3 -2 10 10 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 -1 10 -2 10 -3 10 10 -6 -5 10 -4 10 10 -3 -2 10 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/fdt/scd/ 4