FUJITSU MB85R1002_09

FUJITSU MICROELECTRONICS
DATA SHEET
DS05-13104-5E
Memory FRAM
CMOS
1 M Bit (64 K × 16)
MB85R1002
■ DESCRIPTIONS
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1002 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1002 can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R1002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
•
•
•
•
•
•
•
Bit configuration
Read/write endurance
Operating power supply voltage
Operating temperature range
Data retention
LB and UB data byte control
Package
: 65,536 words × 16 bits
: 1010 times/bit
: 3.0 V to 3.6 V
: − 40 °C to +85 °C
: 10 years (+55 °C)
: 48-pin plastic TSOP (1)
: 48-pin plastic FBGA
Copyright©2005-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.8
MB85R1002
■ PIN ASSIGNMENT
(TOP VIEW)
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
CE2
GND
UB
LB
VCC
NC
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
GND
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
VCC
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
GND
CE1
A0
(FPT-48P-M25)
(Continued)
2
DS05-13104-5E
MB85R1002
(Continued)
Top View
Bottom View
INDEX
A
B
C
D
E
F
G
H
1
2
3
4
5
6
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CE2
B
I/O9
UB
A3
A4
CE1
C
I/O10 I/O11
A5
A6
D
GND I/O12
NC
I/O13
F
6
5
4
3
2
1
6
5
4
3
2
1
A
CE2
A2
A1
A0
OE
LB
I/O1
B
I/O1
CE1
A4
A3
UB
I/O9
I/O2
I/O3
C
I/O3
I/O2
A6
A5
I/O11 I/O10
A7
I/O4
VCC
D
VCC
I/O4
A7
NC
I/O12 GND
NC
NC
I/O5
GND
E
GND
I/O5
NC
NC
I/O13
I/O15 I/O14
A14
A15
I/O6
I/O7
F
I/O7
I/O6
A15
A14
I/O14 I/O15
G
I/O16
NC
A12
A13
WE
I/O8
G
I/O8
WE
A13
A12
NC
I/O16
H
NC
A8
A9
A10
A11
NC
H
NC
A11
A10
A9
A8
NC
E
VCC
VCC
(BGA-48P-M23)
■ PIN DESCRIPTION
Pin name
A0 to A15
I/O1 to I/O16
Address Input
Data Input/Output
CE1
Chip Enable 1 Input
CE2
Chip Enable 2 Input
WE
Write Enable Input
OE
Output Enable Input
LB, UB
VCC
GND
NC
DS05-13104-5E
Function
Data Byte Control Input
Power Supply
Ground
No Connection
3
MB85R1002
■ BLOCK DIAGRAM
to
·
·
·
Address Latch.
A0
Ferro Capacitor Cell
Row Dec.
A15
Column Dec.
intCE2
S/A
intCE2
CE2
intCEB
intOE
intWE
intCE2
I/O1 to I/O8
I/O9 to I/O16
LB
I/O16
UB
·
·
WE
I/O9
OE
CE1
to
intCEB
I/O8
·
·
to
I/O1
4
DS05-13104-5E
MB85R1002
■ FUNCTION TRUTH TABLE
Mode
Standby Pre-charge
Read
Read
(Pseudo-SRAM,
OE control*1)
Write
Write
(Pseudo-SRAM,
WE control*2)
CE1
CE2
WE
OE
LB
UB
H
X
X
X
X
X
X
L
X
X
X
X
X
X
H
H
X
X
X
X
X
X
H
H
L
H
L
L
H
H
L
L
H
H
L
H
L
X
H
I/O1 to I/O8 I/O9 to I/O16
High-Z
High-Z
L
Dout
Dout
L
H
Dout
High-Z
H
L
High-Z
Dout
L
L
Dout
Dout
L
H
Dout
High-Z
H
L
High-Z
Dout
L
L
Din
Din
L
H
Din
High-Z
H
L
High-Z
Din
L
L
Din
Din
L
H
Din
High-Z
H
L
High-Z
Din
Supply Current
Standby
(ISB)
Operation
(ICC)
Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance
: Latch address and latch data at falling edge,
: Latch address and latch data at rising edge
*1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read.
*2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write.
DS05-13104-5E
5
MB85R1002
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Min
Max
Unit
Supply Voltage*
VCC
−0.5
+4.0
V
Input Voltage*
VIN
−0.5
VCC + 0.5
V
VOUT
−0.5
VCC + 0.5
V
Ambient Operating Temperature
TA
−40
+85
o
C
Storage Temperature
Tstg
−40
+125
o
C
Output Voltage*
* : All voltages are referenced to GND.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Typ
Max
Unit
Supply Voltage*
VCC
3.0
3.3
3.6
V
Input Voltage (high)*
VIH
VCC × 0.8
⎯
VCC + 0.5
V
Input Voltage (low)*
VIL
−0.5
⎯
+0.6
TA
− 40
⎯
+85
Ambient Operating Temperature
V
o
C
* : All voltages are referenced to GND.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
6
DS05-13104-5E
MB85R1002
■ ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
Parameter
Symbol
Conditions
(within recommended operating conditions)
Value
Unit
Min
Typ Max
Input Leakage Current
|ILI|
VIN = 0 V to VCC
⎯
⎯
10
μA
Output Leakage Current
|ILO|
VOUT = 0 V to VCC, CE1 = VIH or OE = VIH
⎯
⎯
10
μA
Operating Power Supply
Current
ICC
CE1 = 0.2 V, CE2 = VCC − 0.2 V, Iout = 0 mA*1
⎯
10
15
mA
⎯
10
50
μA
VCC × 0.8
⎯
⎯
V
⎯
⎯
0.4
V
CE1 ≥ VCC − 0.2 V
Standby Current
ISB
CE2 ≤ 0.2 V*2
OE ≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*2
LB ≥ VCC − 0.2 V, UB ≥ VCC − 0.2 V*2
Output Voltage (high)
VOH
IOH = − 2.0 mA
Output Voltage (low)
VOL
IOL = 2.0 mA
*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.
Iout : output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V.
DS05-13104-5E
7
MB85R1002
2. AC TEST CONDITIONS
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature : −40 oC to +85 oC
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 5 ns
Input Falling Time : 5 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
(1) Read Operation
(within recommended operating conditions)
Parameter
Symbol
Value
Min
Max
Unit
Read Cycle time
tRC
150
⎯
ns
CE1 Active Time
tCA1
120
⎯
ns
CE2 Active Time
tCA2
120
⎯
ns
OE Active Time
tRP
120
⎯
ns
LB, UB Active Time
tBP
120
⎯
ns
Pre-charge Time
tPC
20
⎯
ns
Address Setup Time
tAS
0
⎯
ns
Address Hold Time
tAH
50
⎯
ns
OE Setup Time
tES
0
⎯
ns
LB, UB Setup Time
tBS
5
⎯
ns
Output Data Hold time
tOH
0
⎯
ns
Output Set Time
tLZ
30
⎯
ns
CE1 Access Time
tCE1
⎯
100
ns
CE2 Access Time
tCE2
⎯
100
ns
OE Access Time
tOE
⎯
100
ns
Output Floating Time
tOHZ
⎯
20
ns
8
DS05-13104-5E
MB85R1002
(2) Write Operation
(within recommended operating conditions)
Parameter
Value
Symbol
Min
Max
Unit
Write Cycle Time
tWC
150
⎯
ns
CE1 Active Time
tCA1
120
⎯
ns
CE2 Active Time
tCA2
120
⎯
ns
LB, UB Active Time
tBP
120
⎯
ns
Pre-Charge Time
tPC
20
⎯
ns
Address Setup Time
tAS
0
⎯
ns
Address Hold Time
tAH
50
⎯
ns
LB, UB Setup Time
tBS
5
⎯
ns
Write Pulse Width
tWP
120
⎯
ns
Data Setup Time
tDS
0
⎯
ns
Data Hold Time
tDH
50
⎯
ns
Write Setup Time
tWS
0
⎯
ns
3. Pin Capacitance
Parameter
Input Capacitance
Output Capacitance
DS05-13104-5E
Symbol
CIN
COUT
Condition
VIN = VOUT = GND
f = 1 MHz, TA = + 25 oC
Value
Unit
Min
Typ
Max
⎯
⎯
10
pF
⎯
⎯
10
pF
9
MB85R1002
■ TIMING DIAGRAMS
1. Read Cycle Timing (CE1, CE2 Control)
tRC
tCA1
CE1
tPC
CE2
tCA2
tBP
tBS
LB, UB
tAS
A0 to A15
tAH
Valid
H or L
tES
tRP
OE
tCE1,
tCE2
tOHZ
tOH
High-Z
tLZ
I/O1 to I/O16
Valid
Invalid
Invalid
2. Read Cycle Timing (OE Control)
tCA1
CE1
tCA2
CE2
tBP
tBS
LB, UB
tAS
A0 to A15
tAH
Valid
H or L
tRC
OE
tPC
tRP
tOHZ
tOE
tOH
tLZ
I/O1 to I/O16
Invalid
10
High-Z
Valid
Invalid
DS05-13104-5E
MB85R1002
3. Write Cycle Timing (CE1, CE2 Control)
tWC
tCA1
CE1
CE2
tPC
tCA2
tBP
tBS
LB, UB
tAH
tAS
A0 to A15
Valid
H or L
tWS
tWP
WE
tDS
tDH
High-Z
Valid
Data In
H or L
4. Write Cycle Timing (WE Control)
tCA1
CE1
tCA2
CE2
tBP
tBS
LB, UB
tAS
A0 to A15
tAH
Valid
H or L
tWC
tWP
tPC
WE
tDS
tDH
High-Z
Data In
DS05-13104-5E
Valid
H or L
11
MB85R1002
■ POWER ON/OFF SEQUENCE
tpd
tr
tpu
VCC
VCC
CE2
CE2
3.0 V
3.0 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
GND
GND
CE2 ≤ 0.2 V
CE1 > VCC × 0.8*
CE1 > VCC × 0.8*
CE1 : Don't Care
CE1
CE1
* : CE1 (Max) < VCC + 0.5 V
Notes: • Use either of CE1 or CE2, or both for disenable control of the device.
• Because turning the power on from an intermediate level may cause malfunctions,
when the power is turned on, VCC is required to be started from 0 V.
• If the device does not operate within the specified conditions of read cycle, write cycle,
power on/off sequence, memory data can not be guaranteed.
(within recommended operating conditions)
Parameter
Symbol
CE1 LEVEL hold time for Power OFF
Value
Unit
Min
Typ
Max
tpd
85
⎯
⎯
ns
CE1 LEVEL hold time for Power ON
tpu
85
⎯
⎯
ns
Power supply rising time
tr
0.05
⎯
200
ms
■ NOTES ON USE
After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow.
■ ORDERING INFOMATION
Part number
MB85R1002PFTN-GE1
MB85R1002BGT-GE1
12
Package
48-pin plastic TSOP(1)
(FPT-48P-M25)
48-pin plastic FBGA
(BGA-48P-M23)
DS05-13104-5E
MB85R1002
■ PACKAGE DIMENSIONS
48-pin plastic TSOP(1)
Lead pitch
0.50 mm
Package width ×
package length
12.00 × 12.40 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
1.20 mm MAX
Weight
0.37 g
Code
(Reference)
P-TSOP(1)48-12×12.4-0.50
(FPT-48P-M25)
48-pin plastic TSOP(1)
(FPT-48P-M25)
Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max).
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
0.10±0.05
(Stand off)
(.004±.002)
LEAD No.
1
48
0.50(.020)
INDEX
+0.05
0.22 –0.04
+.002
.009 –.002
*1 12.00±0.10
0.10(.004)
M
(.472±.004)
24
25
1.13±0.07
(Mounting height)
(.044±.003)
14.00±0.20(.551±.008)
Details of "A" part
*2 12.40±0.10(.488±.004)
"A"
0°~8°
+0.05
0.08(.003)
C
0.145 –0.03
+.002
.006 –.001
2003-2009 FUJITSU MICROELECTRONICS LIMITED F48043S-c-2-3
0.25(.010)
0.60±0.15
(.024±.006)
Dimensions in mm (inches).
Note: The values in parentheses are reference values
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
(Continued)
DS05-13104-5E
13
MB85R1002
(Continued)
48-pin plastic FBGA
Lead pitch
0.75 mm
Package width ×
package length
8.10 mm × 6.10 mm
Lead shape
Ball
Sealing method
Plastic mold
Mounting height
1.10 mm Max
Weight
0.08 g
(BGA-48P-M23)
48-pin plastic FBGA
(BGA-48P-M23)
5.25(.207)
+0.15
+.006
0.95 –0.10 .043 –.004
(Mounting height)
0.25±0.10(.010±.004)
(Stand off)
8.10±0.20(.319±.008)
0.75(.030)TYP
B
6
5
A
6.10±0.20
(.240±.008)
4
3.75
(.148)
3
2
1
H
(INDEX AREA)
G
F
E
D
C
B
A
S
48-ø0.35±0.05
(48-ø.014±.002)
ø0.08(.003)
M
S A B
0.10(.004)
C
2007-2008 FUJITSU MICROELECTRONICS LIMITED B48023S-c-1-2
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
14
DS05-13104-5E
MB85R1002
MEMO
DS05-13104-5E
15
MB85R1002
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,
Shinjuku-ku, Tokyo 163-0722, Japan
Tel: +81-3-5322-3329
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
Europe
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-3688 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
Korea
FUJITSU MICROELECTRONICS KOREA LTD.
206 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to
the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear
facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon
system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
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The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department