MCL4151 Fast Switching Diode Features Silicon Epitaxial Planar Diodes Electrical data identical with the device 1N4151 Micro Melf package Applications Extreme fast switches Mechanical Data Case: MicroMELF Glass Case Weight: approx. 12.3 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp= 1 us Repetitive peak forward current Forward current Average forward current VR=0 Power dissipation Thermal Characteristics Parameter Junction ambient ( Tamb=25oC unless otherwise specified ) Symbol Value Unit VRRM 75 V VR 50 V IFSM 2 A IFRM 450 mA mA IF 200 IFAV 150 mA PV 500 mW ( Tamb=25oC unless otherwise specified ) Test Condition mounted on epoxy-glass hard tissue, Fig 4. 35 um copper clad, 0.9m2 copper area per electrode Junction temperature Stroage temperature range Symbol Value Unit RthJA 500 K/W Tj 175 o C Tstg -65 to +175 o C Electrical Characteristics Parameter ( Tamb=25oC unless otherwise specified ) Test Condition Forward voltage IF=50mA Reverse current VR=50V VR=50V, Tj=150oC Symbol IR Breakdown voltage IR=5uA, tp/T=0.01, tp=0.3ms V(BR) Diode capacitance VR=0, f=1MHz, VHF=50mV CD Reverse recovery time IF=IR=10mA, iR=1mΑ IF=10mA, VR=6V, iR=0.1x IR, RL=100Ω Min. VF Typ. Max. 0.88 1.0 V 50 nA 50 uA 2 pF 75 Unit V 4 trr 664 2 ns Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 665