BAV300 / 301 / 302 / 303 Switching Diode Features Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BAV100...BAV103 / BAV200...BAV203 Applications General purposes Mechanical Data Case: MicroMELF Glass Case Weight: approx. 12 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition Peak reverse voltage Reverse voltage ( Tamb=25oC unless otherwise specified ) Part Symbol Value Unit BAV300 VRRM 60 V BAV301 VRRM 120 V BAV302 VRRM 200 V BAV303 VRRM 250 V BAV300 VR 50 V V BAV301 VR 100 BAV302 VR 150 V BAV303 VR 200 V mA IF 250 Peak forward surge current Forward current tp= 1 s, Tj=25oC IFSM 1 A Forward peak current f=50Hz IFM 625 mA Thermal Characteristics Parameter Junction ambient ( Tamb=25oC unless otherwise specified ) Test Condition mounted on epoxy-glass hard tissue, Fig 4. 35 um copper clad, 0.9m2 copper area per electrode Junction temperature Stroage temperature range Symbol Value Unit RthJA 500 K/W Tj 175 o C Tstg -65 to +175 o C Electrical Characteristics Parameter ( Tamb=25oC unless otherwise specified ) Test Condition Forward voltage IF=100mA Reverse current VR=50V Breakdown voltage Diode capacitance Part Symbol Min. Typ. Max. Unit VF 1 V BAV300 IR 100 nA VR=100V BAV301 IR 100 nA VR=150V BAV302 IR 100 nA VR=200V BAV303 IR 100 nA Tj=100oC, VR=50V BAV300 IR 15 uA Tj=100oC, VR=100V BAV301 IR 15 uA Tj=100oC, VR=150V BAV302 IR 15 uA Tj=100oC, VR=200V BAV303 IR 15 uA IR=100uA, tp/T=0.01, tp=0.3ms BAV300 V(BR) 60 IR=100uA, tp/T=0.01, tp=0.3ms BAV301 V(BR) 120 V IR=100uA, tp/T=0.01, tp=0.3ms BAV302 V(BR) 200 V IR=100uA, tp/T=0.01, tp=0.3ms BAV303 V(BR) 250 VR=0, f=1MHz V CD 1.5 5 Differential forward resistance IF=10mA rf Reverse recovery time IF=IR=30mA, iR=3mA, RL=100Ω trr 654 V pF Ω 50 ns Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 655