HMC308 / 308E v05.1107 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Typical Applications Features Broadband or Narrow Band Applications: Gain: 18 dB • Cellular/PCS/3G P1dB Output Power: +17 dBm@ +5V • Fixed Wireless & Telematics Single Supply: +3V or +5V • Cable Modem Termination Systems No External Components • WLAN, Bluetooth & RFID Integrated DC Blocks Ultra Small Package: SOT26 Functional Diagram General Description The HMC308 & HMC308E are low cost MESFET MMIC amplifiers that operate from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifier stage or used with external matching for optimized narrow band applications. With Vdd biased at +5V, the HMC308 & HMC308E offers 18 dB of gain and +20 dBm of saturated output power while requiring only 53 mA of current. This amplifier is ideal as a driver amplifier for transmitters or for use as a local oscillator (LO) amplifier to increase drive levels for passive mixers. The amplifier occupies 0.014 in2 (9 mm2), making it ideal for compact radio designs. Electrical Specifi cations, TA = +25° C, as a function of Vdd Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter Units Min. Frequency Range Gain Max. Min. 2.3 - 2.7 13 Gain Variation over Temperature Max. Min. 0.8 - 2.3 15.5 0.025 Typ. 14 0.035 Max. Min. 2.3 - 2.7 18 0.025 Typ. 13 0.035 16 0.025 10 0.035 Typ. Max. 2.7 - 3.8 GHz 13 dB 0.025 0.035 dB/°C Input Return Loss 11 8 11 13 dB Output Return Loss 17 13 12 13 dB 12 15 dBm 17 dBm 24 27 dBm Output Power for 1 dB Compression (P1dB) 12 14 23 26 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 9-2 Typ. 14 17 27 30 17 13.5 20 16.5 19.5 26 29 Noise Figure 7 7.5 7 7 dB Supply Current (Idd) 50 53 53 53 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz P1dB vs. Vdd Bias 24 20 20 10 16 S11 S21 S22 0 12 -10 8 -20 4 -30 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.5 5 9 Vdd=+5V Vdd=+3V 1 1.5 FREQUENCY (GHz) 24 20 20 16 16 12 +25 C +85 C -40 C 4 4 1 1.5 2 2.5 3 3.5 0 0.5 4 1 1.5 -5 -10 REVERSE ISOLATION (dB) 0 -10 -15 -20 -25 S11 Vdd=+5V S22 Vdd=+5V S11 Vdd=+3V S22 Vdd=+3V 1 1.5 2 2.5 FREQUENCY (GHz) 2.5 3 3.5 4 3.5 4 Reverse Isolation vs. Vdd Bias 0 -30 2 FREQUENCY (GHz) Input & Output Return Loss vs. Vdd Bias RETURN LOSS (dB) 3.5 +25 C +85 C -40 C FREQUENCY (GHz) -35 0.5 3 12 8 4 0 0.5 2.5 Gain vs. Temperature @ Vdd = +3V 24 GAIN (dB) GAIN (dB) Gain vs. Temperature @ Vdd = +5V 8 2 FREQUENCY (GHz) 3 3.5 4 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 30 P1dB (dBm) RESPONSE (dB) Broadband Gain & Return Loss @ Vdd = +5V Vdd=+5V Vdd=+3V -20 -30 -40 -50 -60 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9-3 HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Power Compression @ 2.0 GHz, Vdd = +5V 28 Pout Gain PAE 24 20 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 28 16 12 8 4 0 -4 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 24 Pout Gain PAE 20 16 12 8 4 0 -4 -20 -18 -16 -14 -12 -10 -8 6 INPUT POWER (dBm) 20 20 P1dB (dBm) Psat (dBm) 24 16 +25 C +85 C -40 C 8 4 0.5 -4 -2 0 6 +25 C +85 C -40 C 12 8 1 1.5 2 2.5 3 3.5 4 4 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +5V Typical Supply Current vs. Vdd 38 Vdd (Vdc) Idd (mA) 34 +2.5 49 30 +3.0 50 26 +3.5 51 22 +4.5 50 +5.0 53 +5.5 54 +25 C +85 C -40 C 18 14 10 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 9-4 4 16 FREQUENCY (GHz) 6 0.5 2 Output P1dB vs. Temperature @ Vdd = +5V 24 12 -6 INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +5V IP3 (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Power Compression @ 2.5 GHz, Vdd = +5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Pout Gain PAE -6 -4 -2 0 2 4 24 Pout Gain PAE 20 16 12 8 4 0 -4 -20 -18 -16 -14 -12 -10 -8 6 24 20 20 P1dB (dBm) Psat (dBm) 24 16 +25 C +85 C -40 C 1.5 2 2.5 0 2 4 3 3.5 4 +25 C +85 C -40 C 4 0.5 1 1.5 2 2.5 3 3.5 Absolute Maximum Ratings 38 Drain Bias Voltage (Vdd) 34 RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm 30 Channel Temperature 150 °C 26 Continuous Pdiss (T = 85 °C) (derate 6.25 mW/°C above 85 °C) 0.406 W Thermal Resistance (channel to lead) 160 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 22 +25 C +85 C -40 C 14 10 6 0.5 1 1.5 2 2.5 4 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +3V 18 6 12 FREQUENCY (GHz) IP3 (dBm) -2 16 8 8 1 -4 Output P1dB vs. Temperature @ Vdd = +3V Psat vs. Temperature @ Vdd = +3V 4 0.5 -6 INPUT POWER (dBm) INPUT POWER (dBm) 12 9 28 3 3.5 +7.0 Vdc DRIVER & GAIN BLOCK AMPLIFIERS - SMT 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Power Compression @ 2.5 GHz, Vdd = +3V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.0 GHz, Vdd = +3V 4 FREQUENCY (GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9-5 HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Outline Drawing DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish MSL Rating HMC308 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC308E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H308 XXXX [2] 308E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Pin Descriptions 9-6 Pin Number Function Description 1 RFOUT This pin is AC coupled and matched to 50 Ohms. 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 Vdd Power supply voltage. 4 RFIN This pin is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Evaluation PCB List of Materials for Evaluation PCB 103802 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pins U1 HMC308 / HMC308E Amplifier PCB [2] 103220 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 9-7