HMC478ST89 / 478ST89E v02.1205 AMPLIFIERS - SMT 5 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz Designer’s Kit Available Typical Applications Features The HMC478ST89 / HMC478ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +18 dBm • Cellular / PCS / 3G Output IP3: +33 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +5V to +8V • Microwave Radio & Test Equipment Industry Standard SOT89 Package Gain: 22 dB Robust 1,000V ESD, Class 1C Included in the HMC-DK001 Designer’s Kit General Description Functional Diagram The HMC478ST89 & HMC478ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 4 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478ST89 & HMC478ST89E offers 22 dB of gain with a +30 dBm output IP3 at 850 MHz while requiring only 62mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5.0 V, Rbias= 18 Ohm, TA = +25° C Parameter Min. Typ. 19 16 13 11 22 19 16 14 Max. Gain Gain Variation Over Temperature DC - 4.0 GHz 0.015 Input Return Loss DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 4.0 GHz 15 10 13 dB dB dB Output Return Loss DC - 3.0 GHz 3.0 - 4.0 GHz 13 15 dB dB Reverse Isolation DC - 4.0 GHz Output Power for 1 dB Compression (P1dB) 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) dB dB dB dB 0.02 dB/ °C 20 dB 18 16 13 11 dBm dBm dBm dBm 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 30 28 25 dBm dBm dBm DC - 2.0 GHz 2.0 - 4.0 GHz 3 4 dB dB 62 mA 15 13 10 8 Note: Data taken with broadband bias tee on device output. 5 - 438 Units DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478ST89 / 478ST89E v02.1205 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 30 25 20 10 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 15 5 -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 8 +25C +85C -40C 0 1 FREQUENCY (GHz) 2 3 4 5 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) 5 Gain vs. Temperature AMPLIFIERS - SMT Broadband Gain & Return Loss -5 -10 -15 +25C +85C -40C -20 -25 -30 +25C +85C -40C -5 -10 -15 -20 0 1 2 3 4 0 5 1 FREQUENCY (GHz) 2 3 4 5 4 5 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 8 -10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -5 +25C +85C -40C -15 -20 +25C +85C -40C 7 6 5 4 3 2 -25 1 -30 0 0 1 2 3 FREQUENCY (GHz) 4 5 0 1 2 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 439 HMC478ST89 / 478ST89E v02.1205 P1dB vs. Temperature Psat vs. Temperature 24 24 22 22 20 20 18 18 16 16 Psat (dBm) P1dB (dBm) 14 12 10 8 6 4 14 12 10 8 +25C +85C -40C +25C +85C -40C 6 4 2 2 0 0 0 1 2 3 4 5 0 FREQUENCY (GHz) 35 OIP3 (dBm) 30 25 20 +25C +85C -40C 10 0 1 2 3 4 5 Icc (mA) 70 +25C 60 55 -40C 50 45 3.9 3.95 4 4.05 4.1 Vcc (Vdc) 5 - 440 4.15 4.2 4.25 4.3 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) +85C 3.85 5 32 28 24 20 16 Gain P1dB Psat OIP3 12 8 4 0 5 6 7 8 Gain, Power & OIP3 vs. Supply Voltage for Rs = 18 Ohms @ 850 MHz 80 40 3.8 4 Vs (Vdc) Vcc vs. Icc Over Temperature for Fixed Vs= 5V, RBIAS= 18 Ohms 65 3 36 FREQUENCY (GHz) 75 2 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 62 mA @ 850 MHz Output IP3 vs. Temperature 15 1 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 36 32 28 24 20 16 12 Gain P1dB Psat OIP3 8 4 0 4.5 5 Vs (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 HMC478ST89 / 478ST89E v02.1205 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 5 Collector Bias Voltage (Vcc) +6.0 Vdc RF Input Power (RFin)(Vcc = +4.2 Vdc) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 9.5 mW/°C above 85 °C) 0.615 W Thermal Resistance (junction to lead) 105.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1C AMPLIFIERS - SMT Absolute Maximum Ratings ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC478ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC478ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H478 XXXX [2] H478 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 441 HMC478ST89 / 478ST89E v02.1205 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 5 Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V RBIAS VALUE 18 Ω 35 Ω 67 Ω RBIAS POWER RATING 1/8 W 1/4 W 1/2 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 5 - 442 50 900 1900 2200 2400 3500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478ST89 / 478ST89E v02.1205 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 110161 Item Description J1 - J2 PC Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1210 Pkg. L1 Inductor, 0603 Pkg. U1 HMC478ST89 / HMC478ST89E PCB [2] 108370 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 443