HMC619LP5 / 619LP5E v07.0908 LINEAR & POWER AMPLIFIERS - SMT 6 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC619LP5(E) wideband PA is ideal for: P1dB Output Power: +27 dBm • Telecom Infrastructure Gain: 11 dB • Microwave Radio & VSAT Output IP3: +37 dBm • Military & Space Supply Voltage: +12V @ 300 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 32 Lead 5x5mm Lead SMT Package: 25mm2 Functional Diagram General Description The HMC619LP5(E) is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 10 GHz. The amplifier provides 11 dB of gain, +37 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring 300 mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC - 10 GHz making the HMC619LP5(E) ideal for EW, ECM, Radar and test equipment applications. The HMC619LP5(E) amplifier I/Os are internally matched to 50 ohms. Electrical Specifi cations, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 2.0 10 Max. Min. 10.5 dB dB Gain Variation Over Temperature 0.016 0.02 0.03 dB/ °C 11 12.5 17 dB 16 Saturated Output Power (Psat) 29 Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= +12V, Vgg1= -0.8V Typ.) 16 12 dB 25 dBm 28 25.5 dBm 41 37 32 dBm 5 5 7 dB 300 300 300 mA 25 27 23 * Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. 6 - 324 GHz ±0.5 28 8 Units ±0.25 Output Power for 1 dB Compression (P1dB) 11 Max. ±0.5 Output Return Loss 9 Typ. 8.0 - 10.0 Gain Flatness Input Return Loss 12 Typ. 2.0 - 8.0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Gain & Return Loss Gain vs. Temperature 20 18 15 6 12 -10 9 6 -20 +25C +85C -40C 3 -30 0 0 2 4 6 8 10 12 0 2 FREQUENCY (GHz) 8 10 12 Output Return Loss vs. Temperature 0 0 -5 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 6 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 +25C +85C -40C -25 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 0 2 4 6 8 10 12 10 12 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 15 -10 -20 +25C +85C -40C 12 +25C +85C -40C NOISE FIGURE (dB) ISOLATION (dB) 4 LINEAR & POWER AMPLIFIERS - SMT S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -30 -40 9 6 3 -50 0 -60 0 2 4 6 8 FREQUENCY (GHz) 10 12 0 2 4 6 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 325 HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Psat vs. Temperature 32 30 30 28 28 Psat (dBm) 32 26 24 26 24 +25C +85C -40C 22 +25C +85C -40C 22 20 20 0 2 4 6 8 10 0 2 4 FREQUENCY (GHz) 6 8 Output IP3 vs. Output Power @ 5GHz 50 45 40 11.5V 12.0V 12.5V IP3 (dBm) 45 35 30 35 +25C +85C -40C 25 40 20 30 2 4 6 8 10 0 12 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 24 OUTPUT POWER (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 0 40 35 30 25 Gain P1dB Psat IP3 20 15 10 11.5 12 12.5 Vdd Supply Voltage (V) 6 - 326 10 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 6 P1dB (dBm) P1dB vs. Temperature For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Power Compression @ 1 GHz Power Compression @ 5 GHz 32 Pout Gain PAE 24 20 16 12 8 4 0 28 Pout Gain PAE 24 16 12 8 4 0 0 4 8 12 16 20 0 4 INPUT POWER (dBm) 8 12 16 20 INPUT POWER (dBm) Power Compression @ 10 GHz Power Dissipation 32 10 28 9 Pout Gain PAE 24 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 6 20 20 16 12 8 4 Max Pdis @ 85C 2 GHz 6 GHz 8 7 6 5 4 3 0 0 4 8 12 16 20 2 -10 -5 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) 13 Vdc Gate Bias Voltage (Vgg1) -2.5 to 0 Vdc 0 5 10 15 20 INPUT POWER (dBm) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 11.5 299 Gate Bias Voltage (Vgg2) +4V to +6V 12.0 300 RF Input Power (RFIN)(Vdd = +12 Vdc) 27 dBm 12.5 301 Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 65 mW/°C above 85 °C) 4.2 W Thermal Resistance (channel to package bottom) 15.3 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C LINEAR & POWER AMPLIFIERS - SMT 28 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 327 HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - SMT 6 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC619LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC619LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H619 XXXX [2] H619 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 6 - 328 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Pin Descriptions Function Description 1, 3, 4, 6-12, 14, 17, 18, 19, 20, 22-28, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 2 Vgg2 Gate Control 2 for amplifier. +5V should be applied to Vgg2 for nominal operation. 5 RFIN This pad is DC coupled and matched to 50 Ohms. 13 Vgg1 Gate Control 1 for amplifier. 15 ACG4 Interface Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. 16 21 29 ACG3 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 30 ACG1 Ground Paddle GND 6 LINEAR & POWER AMPLIFIERS - SMT Pin Number Ground paddle must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 329 HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Application Circuit LINEAR & POWER AMPLIFIERS - SMT 6 6 - 330 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619LP5 / 619LP5E v07.0908 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Evaluation PCB List of Materials for Evaluation PCB 108347 [1] Item Description J1 - J2 SRI K Connector J3 - J4 2mm Molex Header C1, C2 100 pF Capacitor, 0402 Pkg. C3 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C9 4.7 μF Capacitor, Tantalum U1 HMC619LP5 / HMC619LP5E PCB [2] 109765 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 6 6 - 331