HMC313 / 313E v04.0307 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Typical Applications Features Ideal as a Driver & Amplifier for: P1dB Output Power: +14 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +27 dBm • 3.5 GHz Wireless Local Loop Gain: 17 dB • 5.0 - 6.0 GHz UNII & HiperLAN Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 Included in the HMC-DK001 Designer’s Kit General Description Functional Diagram The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 & HMC313E offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. Electrical Specifications, TA = +25 °C, Vcc = +5.0V Vcc = +5V Parameter Units Min. Frequency Range Gain Typ. Max. DC - 6 14 Gain Variation Over Temperature Input Return Loss GHz 17 20 dB 0.02 0.03 dB/°C 7 dB Output Return Loss 6 dB Reverse Isolation 30 dB 14 dBm 15 dBm 27 dBm Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 11 Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz 24 Noise Figure 6.5 dB Supply Current (Icc) 50 mA Note: Data taken with broadband bias tee on device output. 5 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E v04.0307 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Gain & Return Loss 5 Gain vs. Temperature 20 20 10 S11 S21 S22 5 GAIN (dB) RESPONSE (dB) 15 0 15 + 25 C + 85 C - 40 C 10 -5 -10 5 -15 -20 0 0 1 2 3 4 5 6 7 0 1 2 FREQUENCY (GHz) 3 4 5 6 7 5 6 7 6 7 FREQUENCY (GHz) Reverse Isolation Input & Output Return Loss 0 0 ISOLATION (dB) RETURN LOSS (dB) -10 -5 -10 S11 S22 -15 -20 -30 -40 -20 -50 0 1 2 3 4 5 6 7 0 1 2 FREQUENCY (GHz) P1dB vs. Temperature 4 Psat vs. Temperature 25 25 20 + 25 C + 85 C - 40 C 20 + 25 C + 85 C - 40 C Psat (dBm) P1dB (dBm) 3 FREQUENCY (GHz) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 25 25 15 10 5 15 10 5 0 0 0 1 2 3 4 FREQUENCY (GHz) 5 6 7 0 1 2 3 4 5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 29 HMC313 / 313E v04.0307 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz 5 Output IP3 vs. Temperature Power Compression @ 1.0 GHz 20 5 - 30 Pout (dBm), Gain (dB), PAE (%) 35 30 25 20 15 + 25 C + 85 C - 40 C 10 5 0 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 15 10 5 0 Pout (dBm) Gain (dB) PAE (%) -5 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 Power Compression @ 3.0 GHz 20 Pout (dBm), Gain (dB), PAE (%) IP3 (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 40 15 10 5 0 -5 Pout (dBm) Gain (dB) PAE (%) -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 INPUT POWER (dBm) -4 -2 0 2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 2 4 HMC313 / 313E v04.0307 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Collector Bias Voltage (Vcc) +5.5 Vdc RF Input Power (RFin)(Vcc = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 3.99 mW/°C above 85 °C) 0.259 W Thermal Resistance (junction to lead) 251 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5 Absolute Maximum Ratings 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish MSL Rating HMC313 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC313E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H313 XXXX [2] 313E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 31 HMC313 / 313E v04.0307 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz Pin Descriptions Pin Number Function Description 1 RFOUT This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2, 4-6 GND These pins must be connected to RF/DC ground. Interface Schematic Application Circuit Recommended Bias Resistor Values for Icc = 50 mA, Rbias = (Vs - 5.0) / Icc Supply Voltage (Vs) 5V 6V 8V RBIAS VALUE 0Ω 20 Ω 62 Ω ¼W ½W RBIAS POWER RATING Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. 5 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E v04.0307 GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz 5 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 104217 Item Description J1 - J2 PCB Mount SMA Connector U1 HMC313 / HMC313E PCB [2] Evaluation PCB 1.5” x 1.5” [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 [1] The circuit board used in the final applicatin should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 33