HITTITE HMC516LC5

HMC516LC5
v00.1204
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC516LC5 is ideal for use as a LNA or
driver amplifier for:
Noise Figure: 2.0 dB
• Point-to-Point Radios
OIP3: +25 dBm
• Point-to-Multi-Point Radios & VSAT
Single Supply: +3V @ 65 mA
• Test Equipment and Sensors
50 Ohm Matched Input/Output
• Military
RoHS Compliant 5 X 5 mm Package
Functional Diagram
General Description
Gain: 20 dB
The HMC516LC5 is a high dynamic range
GaAs PHEMT MMIC Low Noise Amplifier (LNA)
housed in a leadless “Pb free” RoHS compliant
SMT package. The HMC516LC5 provides 20 dB
of small signal gain, 2.0 dB of noise figure and
has an output IP3 of +25 dBm. The P1dB output
power of +13 dBm enables the LNA to also
function as a LO driver for balanced, I/Q or image
reject mixers. The HMC516LC5 allows the use of
surface mount manufacturing techniques.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Min.
Frequency Range
Gain
17.5
Gain Variation Over Temperature
8 - 458
Typ.
Max.
Min.
9 - 12
Typ.
Max.
12 - 18
20
18
Units
GHz
20.5
dB
0.015
0.025
0.015
0.025
dB/ °C
Noise Figure
2.0
2.5
2.0
2.5
dB
Input Return Loss
10
10
Output Return Loss
12
12
dB
Output Power for 1 dB Compression (P1dB)
13
14
dBm
Saturated Output Power (Psat)
15
16
dBm
dB
Output Third Order Intercept (IP3)
25
25
dBm
Supply Current (Idd)(Vdd = +3V)
65
65
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC516LC5
v00.1204
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
GaAs Gain
MMIC
SUB-HARMONICALLY
PUMPED
MIXER
Broadband
& Return
Loss
Gain
vs. Temperature
25
17 - 25 GHz
20
10
18
S21
S11
S22
5
GAIN (dB)
RESPONSE (dB)
15
0
-5
16
+25C
+85C
-40C
14
-10
12
-15
-20
10
4
6
8
10
12
14
16
18
20
22
8
10
FREQUENCY (GHz)
12
14
16
18
FREQUENCY (GHz)
Input Return Loss vs. Temperature
AMPLIFIERS - SMT
22
20
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-5
+25C
+85C
-40C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
8
-10
-15
-10
-15
-20
-25
-20
-30
8
10
12
14
16
18
8
10
FREQUENCY (GHz)
12
14
16
18
16
18
FREQUENCY (GHz)
Noise Figure vs. Temperature
Output IP3 vs. Temperature
35
10
9
30
25
7
6
OIP3 (dBm)
NOISE FIGURE (dB)
8
+25C
+85C
-40C
5
4
3
20
15
+25C
+85C
-40C
10
2
5
1
0
0
8
10
12
14
FREQUENCY (GHz)
16
18
8
10
12
14
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 459
HMC516LC5
v00.1204
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
Psat vs. Temperature
P1dB vs. Temperature
20
20
18
18
16
16
14
14
Psat (dBm)
P1dB (dBm)
AMPLIFIERS - SMT
8
12
10
8
+25C
+85C
-40C
6
12
10
8
+25C
+85C
-40C
6
4
4
2
2
0
0
8
10
12
14
16
18
8
10
12
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
16
25
Pout (dBm), GAIN (dB), PAE (%)
-10
-20
-30
+25C
+85C
-40C
-40
-50
-60
-70
-80
8
10
12
14
16
20
10
5
0
-22
18
Pout
Gain
PAE
15
-20
-18
-16
FREQUENCY (GHz)
-14
-12
-10
-8
-6
INPUT POWER (dBm)
24
7
22
6
5
20
Gain
4
18
3
16
P1dB
2
14
Noise Figure
1
12
0
10
2.5
NOISE FIGURE (dB)
GAIN (dB), P1dB (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 12 GHz
3
3.5
Vdd (Vdc)
8 - 460
18
Power Compression @ 12 GHz
0
ISOLATION (dB)
14
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
-4
-2
0
HMC516LC5
v00.1204
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
Drain Bias Voltage (Vdd1, Vdd2,
Vdd3)
+4 Vdc
RF Input Power (RFin)(Vdd = +3.0
Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 14 mW/°C above 85 °C)
1.25 W
Thermal Resistance
(channel to die bottom)
71 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+2.5
61
+3.0
65
+3.5
69
Note: Amplifier will operate over full voltage range
shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 461
HMC516LC5
v00.1204
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
AMPLIFIERS - SMT
8
Pin Descriptions
Pin Number
Function
Description
1, 2, 6-19,
23-25, 27,
29, 31, 32
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
4
RFIN
This pin is AC coupled and matched to 50 Ohms from
9 - 18 GHz.
30, 28, 26
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 µF are required.
21
RFOUT
This pin is AC coupled and matched to 50 Ohms from
9 - 18 GHz.
3, 5, 20, 22
GND
These pins and package bottom must be
connected to RF/DC ground.
Interface Schematic
Application Circuit
8 - 462
Component
Value
C1, C2, C3
100 pF
C4, C5, C6
2.2 µF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC516LC5
v00.1204
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 110431*
Item
Description
J1 - J2
PC Mount K Connector
J3
2 mm DC Header
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4 - C6
2.2 µF Capacitor, Tantalum
U1
HMC516LC5 Amplifier
PCB**
109001 Evaluation PCB
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB
The circuit board used in the final application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat sink.
The evaluation circuit board shown is available from
Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 463