HMC758LP3 / 758LP3E v00.1108 Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Typical Applications Features The HMC758LP3(E) is ideal for: Noise Figure: 1.7 dB • Cellular Infrastructure, WiMAX & LTE/4G Gain: 22 dB • Software Defined Radios Output IP3: +37 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Access Points 50 Ohm Matched Input/Output • Test & Measurement Equipment 16 Lead 3x3 mm SMT Package: 9 mm2 Functional Diagram General Description The HMC758LP3(E) is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular Infrastructure, WiMAX & LTE/4G basestation front-end receivers operating between 700 and 2200 MHz. The amplifier has been optimized to provide 1.7 dB noise figure, 21 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC758LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω* Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 700 - 1700 19 Gain Variation Over Temperature Vdd = +5V Typ. Max. Min. 1700 - 2200 21.8 16 0.005 Min. 20 18 MHz 21.3 dB 0.01 dB/ °C 1.6 15 13 14 14 dB Output Return Loss 11 15 10 12 dB 24 dBm 18 18 20 20.5 2.6 Units Input Return Loss 16 1.7 Max. 1700 - 2200 22.7 0.004 1.8 Typ. Noise Figure Output Power for 1 dB Compression (P1dB) 1.4 Max. 700 - 1700 19.4 0.01 2.5 Typ. 22.5 1.6 22 2.0 dB Saturated Output Power (Psat) 20 21.5 23.5 25 dBm Output Third Order Intercept (IP3) 31 31.5 36 35 dBm Supply Current (Idd) 80 102 130 80 102 130 190 227 260 190 227 260 mA * R1 & R2 resistors set current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 20 Vdd=5V Vdd=3V 23 10 5 GAIN (dB) RESPONSE (dB) 15 S21 0 -5 +25C +85C -40C 19 -10 17 -15 S22 -20 S11 -25 0 1 2 3 4 FREQUENCY (GHz) 5 15 0.5 6 25 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 2.1 2.5 2.1 2.5 0 RETURN LOSS (dB) 23 21 +25C +85C -40C 19 17 15 0.5 0.9 Input Return Loss vs. Temperature, Vdd = +5V Gain vs. Temperature, Vdd = +3V GAIN (dB) 21 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 Output Return Loss vs. Temperature, Vdd = +5V -10 -15 -20 0.5 2.5 +25C +85C -40C -5 Amplifiers - Low Noise - SMT 25 25 0.9 1.3 1.7 FREQUENCY (GHz) Reverse Isolation vs. Temperature, Vdd = +5V 0 0 -10 +25C +85C -40C -5 ISOLATION (dB) RETURN LOSS (dB) 7 Gain vs. Temperature, Vdd = +5V Broadband Gain & Return Loss -10 +25C +85C -40C -20 -30 -40 -15 -50 -20 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 -60 0.5 0.9 1.3 1.7 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC758LP3 / 758LP3E v00.1108 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Output IP3 vs. Temperature Noise Figure vs. Temperature [1] 45 +85C Vdd=5V Vdd=3V 2 1.5 +25C 35 30 1 -40C 20 0.5 0 0.5 +25C +85C -40C 25 0.5 0.9 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz 0.9 Vdd=3V 1.3 1.7 FREQUENCY (GHz) 2.1 2.5 Output IP3 and Supply Current vs. Supply Voltage @ 1900 MHz 45 250 40 35 200 35 200 30 150 30 150 40 IP3 Idd 20 2.7 3.1 3.5 3.9 4.3 4.7 5.1 100 25 50 20 2.7 5.5 300 Idd 100 50 3.1 3.5 Voltage Supply (V) Output IP3 vs. Output Power @ 900 MHz 250 IP3 3.9 4.3 4.7 Voltage Supply (V) 5.1 5.5 Output IP3 vs. Output Power @ 1900 MHz 40 36 35 38 IP3 (dBm) IP3 (dBm) 34 36 Vdd=3V Vdd=5V 34 Vdd=3V Vdd=5V 33 32 32 30 -10 31 -5 0 5 10 OUTPUT POWER (dBm) 30 -10 -5 0 5 10 OUTPUT POWER (dBm) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 Idd (mA) 25 IP3 (dBm) 300 45 IP3 (dBm) Vdd=5V 40 IP3 (dBm) NOISE FIGURE (dB) 2.5 Idd (mA) Amplifiers - Low Noise - SMT 3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Power Compression @ 900 MHz [1] 20 15 10 5 Pout Gain PAE 0 -5 -20 -15 -10 -5 0 20 10 5 0 -5 -25 5 Pout Gain PAE 15 -20 INPUT POWER (dBm) -15 -10 -5 0 INPUT POWER (dBm) Power Compression @ 1900 MHz [2] Power Compression @ 1900 MHz [1] 40 Pout (dBm), Gain (dB), PAE (%) 40 Pout Gain PAE 30 20 10 0 -10 -20 -15 -10 -5 0 INPUT POWER (dBm) 5 10 Pout Gain PAE 30 20 10 Amplifiers - Low Noise - SMT 25 Pout (dBm), Gain (dB), PAE (%) Pout (dBm), Gain (dB), PAE (%) 25 Pout (dBm), Gain (dB), PAE (%) 7 Power Compression @ 900 MHz [2] 0 -10 -20 -15 -10 -5 0 INPUT POWER (dBm) 5 10 Typical Supply Current vs. Vdd (R1 = 390Ω, R2 = 560Ω) Recommended Bias Resistor Values for Idd Vdd (V) R1 (Ohms) R2 (Ohms) Idd (mA) Vdd (V) Idd (mA) 3V 390 560 102 2.7 80 3V 1k 1.5k 85 3 102 3V 3.3k 4.7k 54 3.3 122 5V 390 560 227 4.5 200 5V 1k 1.5k 190 5 227 5V 3.3k 4.7k 124 5.5 255 Absolute Min/Max Bias Resistor Range Max Note: Amplifier will operate over full voltage range shown above. Min R1 (Ohms) R2 (Ohms) R1 (Ohms) R2 (Ohms) 3.9k 5.6k 270 470 [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC758LP3 / 758LP3E v00.1108 Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 V RF Input Power (RFIN) (Vdd = +5V) +5 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 20 mW/°C above 85 °C) 1.3 W Thermal Resistance (channel to ground paddle) 50 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC758LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC758LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 758 XXXX 758 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Pin Number Function Description 1, 3 - 6, 7 - 10, 12, 14 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled. An off-chip DC blocking capacitor is required. 11 RFOUT This pin is DC coupled. An off-chip DC blocking capacitor is required. 13 BIAS2 This pin is used to set the DC current of the second stage amplifier by selection of external bias resistor. See application circuit. 15 Vdd Power Supply Voltage for the amplifier. Bypass capacitors are required. See application circuit. 16 BIAS1 This pin is used to set the DC current of the first stage amplifier by selection of external bias resistor. See application circuit. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT 7 Pin Descriptions 7-6 HMC758LP3 / 758LP3E v00.1108 Application Circuit Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 121703 Item J1, J2 Description PCB Mount SMA RF Connector J3, J4 DC Pin C1 220 pF Capacitor, 0402 Pkg. C2 10 pF Capacitor, 0402 Pkg. C3 - C5 10 nF Capacitor, 0603 Pkg. C6 2.2 µF Tantalum Capacitor R1 390 Ohm Resistor, 0402 Pkg. R2 560 Ohm Resistor, 0402 Pkg. U1 HMC758LP3(E) Amplifier PCB [2] 121701 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8