HMC797 v02.1011 Amplifiers - Linear & Power - Chip 3 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features The HMC797 is ideal for: High P1dB Output Power: +28 dBm • Test Instrumentation High Psat Output Power: +31 dBm • Microwave Radio & VSAT High Gain: 14.5 dB • Military & Space High Output IP3: +40 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 400 mA • Fiber Optics 50 Ohm Matched Input/Output Die Size: 2.89 x 1.55 x 0.1 mm Functional Diagram General Description The HMC797 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400mA from a +10V supply. This versatile PA exhibits a positive gain slope from 3 to 21 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA* Parameter Min. Frequency Range Typ. Max. Min. DC - 10 Typ. Max. Min. 10 - 18 Typ. Max. Units 18 - 22 GHz dB Gain 13.5 14.5 15.5 Gain Flatness ±0.5 ±0.7 ±0.4 dB Gain Variation Over Temperature 0.009 0.01 0.012 dB/ °C dB Input Return Loss 16 17 18 Output Return Loss 16 18 17 dB 28 dBm 31 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 27 28.5 27 28.5 31 31 26.5 Output Third Order Intercept (IP3) 41 40 39 dBm Noise Figure 3.5 3 3.5 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 400 400 400 mA * Adjust Vgg1 between -2 to 0V to achieve Idd = 400 mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Gain & Return Loss Gain vs. Temperature 20 18 16 3 14 -10 12 10 -20 +25C +85C -55C 8 -30 6 0 5 10 15 20 25 30 0 4 8 FREQUENCY (GHz) 0 -10 -10 -20 +25C +85C -55C -40 20 24 +25C +85C -55C -20 -30 -40 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) 12 16 20 24 FREQUENCY (GHz) Noise Figure vs. Frequency Reverse Isolation vs. Temperature 7 0 -10 6 NOISE FIGURE (dB) +25C +85C -55C -20 ISOLATION (dB) 16 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -30 12 FREQUENCY (GHz) Amplifiers - Linear & Power - Chip S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -30 -40 -50 -60 5 4 3 2 1 -70 0 -80 0 4 8 12 16 FREQUENCY (GHz) 20 24 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz P1dB vs. Temperature Psat vs. Temperature 34 34 32 Psat (dBm) P1dB (dBm) 30 28 28 26 24 24 +25C +85C -55C 22 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) 16 20 24 20 24 Psat vs. Vdd 34 34 32 32 30 30 P1dB (dBm) P1dB (dBm) 12 FREQUENCY (GHz) P1dB vs. Vdd 28 26 28 +10V +11V 26 +10V +11V 24 24 22 22 0 4 8 12 16 20 24 0 4 8 FREQUENCY (GHz) 12 16 FREQUENCY (GHz) Output IP3 vs. Temperature @ Pout = 18 dBm Tone Output IP3 vs. Output Power @ 10 GHz 50 45 45 40 40 IP3 (dBm) 50 35 +25C +85C -55C 30 300 mA 350 mA 400 mA 35 30 25 25 0 4 8 12 16 FREQUENCY (GHz) 3-3 30 26 22 IP3 (dBm) Amplifiers - Linear & Power - Chip 3 32 +25C +85C -55C 20 24 10 12 14 16 18 20 22 24 OUTPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 10 GHz Power Compression @ 2 GHz 32 24 20 16 12 8 4 0 28 Pout Gain PAE 24 16 12 8 4 0 0 3 6 9 12 15 18 21 0 3 6 INPUT POWER (dBm) 12 15 18 21 Power Dissipation 32 6 Pout Gain PAE 28 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 9 INPUT POWER (dBm) Power Compression @ 22 GHz 24 20 16 12 8 4 0 5 4 3 2 Max Pdis @ 85C 2 GHz 20 GHz 1 0 0 3 6 9 12 15 18 0 4 INPUT POWER (dBm) 8 12 16 20 INPUT POWER (dBm) Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Temperature @ Pout = 18 dBm 70 70 60 +25C +85C -55C 50 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 3 20 40 30 20 Amplifiers - Linear & Power - Chip Pout Gain PAE 28 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 60 +8V +10V +11V 50 40 30 20 10 10 0 0 0 4 8 12 16 FREQUENCY(GHz) 20 24 0 4 8 12 16 20 24 FREQUENCY(GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz 3-5 Second Harmonics vs. Pout 70 70 60 60 SECOND HARMONIC (dBc) Amplifiers - Linear & Power - Chip 3 SECOND HARMONIC (dBc) Second Harmonics vs. Idd @ Pout = 18 dBm 300 mA 350 mA 400 mA 50 40 30 20 10 +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm +22 dBm +24 dBm 50 40 30 20 10 0 0 0 4 8 12 16 20 24 0 4 FREQUENCY(GHz) Absolute Maximum Ratings 8 12 16 20 Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +12 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -3 to 0 Vdc +9 400 Gate Bias Voltage (Vgg2) Vgg2 = (Vdd -6.5V) to 4.5V. For Vdd <8.5V, Vgg2 must remain >2V +10 400 +11 400 RF Input Power (RFIN) +27 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 69 mW/°C above 85 °C) 4.5 W Thermal Resistance (channel to die bottom) 14.5 °C/W Output Power into VSWR >7:1 29 dBm Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C 24 FREQUENCY(GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Outline Drawing This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. Die Packaging Information [1] Standard Alternate WP-19 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section on our website for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip 3 3-6 HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Pad Number Function Description 3 1 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. Amplifiers - Linear & Power - Chip Pad Descriptions 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For nominal operation +3.5V should be applied to Vgg2. 4, 7 ACG2, ACG4 Low frequency termination. Attach bypass capacitors per application circuit herein. 3 ACG1 Low frequency termination. Attach bypass capacitors per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. 3-7 Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Assembly Diagram Application Circuit Amplifiers - Linear & Power - Chip 3 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-8 HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Amplifiers - Linear & Power - Chip 3 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC797 v02.1011 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz Notes: Amplifiers - Linear & Power - Chip 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 - 10