HMC818LP4E v01.0809 Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure High OIP3: +35 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radios 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm² Functional Diagram General Description The HMC818LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC818LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for a specific application. Electrical Specifications, TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4 Parameter Vdd = 3V Min. Frequency Range Gain Typ. Max. Min. 1700 - 2000 15 0.010 Noise Figure 0.95 Max. Min. 2000 - 2200 18 Gain Variation Over Temperature Vdd = 5V Typ. 14 0.95 Max. Min. 1700 - 2000 16.5 17 0.008 1.2 Typ. 0.85 Max. 2000 - 2200 20.5 15.5 0.015 1.2 Typ. 1.1 Units MHz 17.5 dB 0.012 dB/°C 0.85 1.1 dB Input Return Loss 18 17 21 18 dB Output Return Loss 16 15 15 13 dB Output Power for 1 dB Compression (P1dB) 14 15 19 21 dBm Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 30 15 16 20 21.5 dBm 24.5 25 33 35 dBm 42 55 30 42 55 78 112 146 78 112 146 mA * Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss [1] [2] 7 Gain vs. Temperature [1] 25 24 22 Vdd=5V Vdd=3V 5 -5 GAIN (dB) RESPONSE (dB) 15 S22 -15 S11 12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 0 24 -5 RETURN LOSS (dB) 26 20 18 16 +25C +85C - 40C 14 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C -10 -15 -20 -25 -30 12 -35 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output Return Loss vs. Temperature [1] 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Reverse Isolation vs. Temperature [1] 0 0 -5 -5 RETURN LOSS (dB) +25 C +85 C - 40 C -10 -15 -20 -25 -30 -10 +25 C +85 C - 40 C -15 -20 -25 -30 -35 -40 -35 1.6 1.7 Input Return Loss vs. Temperature [1] 22 GAIN (dB) 1.6 3 Gain vs. Temperature [2] 1.6 +25C +85C - 40C 14 -35 RETURN LOSS (dB) 18 16 -25 0.8 20 Amplifiers - Low Noise - SMT 26 S21 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 10K 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [2] Vdd = 3V, Rbias = 10K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC818LP4E v01.0809 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Noise Figure vs Temperature [1] Output P1dB vs. Temperature 24 22 +85C 1.2 20 1 0.8 P1dB (dBm) NOISE FIGURE (dB) 1.4 +25 C 0.6 -40C 0.4 Vdd=5V Vdd=3V 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.6 Vdd=3V +25 C +85 C - 40 C 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output IP3 vs. Temperature 38 24 36 22 Vdd=5V 34 20 IP3 (dBm) 32 18 Vdd=3V 16 +25 C +85 C - 40 C Vdd=5V 30 28 Vdd=3V 26 14 +25 C +85 C - 40 C 12 24 22 20 10 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 1.6 2.3 Output IP3 and Idd vs. Supply Voltage @ 1700 MHz 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz 38 240 34 180 36 210 32 150 34 180 30 120 32 150 30 120 28 90 28 90 26 60 26 60 24 30 24 30 22 0 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) IP3 (dBm) 210 2.7 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 36 Idd (mA) IP3 (dBm) 16 10 1.7 Psat vs. Temperature 1.6 18 12 0 1.6 Vdd=5V 14 0.2 Psat (dBm) Amplifiers - Low Noise - SMT 1.6 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Power Compression @ 1700 MHz [1] 20 10 Pout Gain PAE 0 -10 20 10 Pout Gain PAE 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -16 -14 -12 INPUT POWER (dBm) -10 -8 -6 -4 -2 INPUT POWER (dBm) Power Compression @ 2100 MHz [1] Power Compression @ 2100 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 30 Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Low Noise - SMT 30 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 20 10 0 Pout Gain PAE -10 20 10 Pout Gain PAE 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 -16 -14 -12 -10 INPUT POWER (dBm) 1.6 26 1.4 24 20 1 18 0.8 16 0.6 0.4 14 10 2.7 GAIN P1dB 3.1 3.5 3.9 4.3 4.7 SUPPLY VOLTAGE (V) [1] Vdd = 5V -4 -2 0 2 5.1 0.2 0 5.5 1.6 1.4 Noise Figure 22 1.2 20 1 18 0.8 16 0.6 14 GAIN P1dB 12 10 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0.4 NOISE FIGURE (dB) 1.2 NOISE FIGURE (dB) 22 GAIN (dB) & P1dB (dBm) Noise Figure 12 -6 Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz 26 24 -8 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz GAIN (dB) & P1dB (dBm) 7 Power Compression @ 1700 MHz [2] 0.2 0 5.5 SUPPLY VOLTAGE (V) [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC818LP4E v01.0809 Gain, Noise Figure & Rbias @ 1700 MHz [1] Output IP3 vs. Rbias @ 1700 MHz [1] 36 24 2 34 23 1.8 22 1.6 21 1.4 20 1.2 19 1 GAIN (dB) IP3 (dBm) 32 30 28 26 18 0.8 24 17 0.6 22 16 100 1000 10000 0.4 100 1000 Rbias (Ohms) 36 120 34 100 32 80 30 60 28 26 24 20 1.2 19 18 1 17 16 40 15 20 14 0.8 0.6 13 0 10000 1000 1.4 21 GAIN (dB) 140 100 1000 Rbias (Ohms) Rbias(Ohms) Cross Channel Isolation [1] Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 0 RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 -10 ISOLATION (dB) 10000 -20 -30 1.7 1.8 1.9 2 FREQUENCY (GHz) 2.1 2.2 2.3 0.5 0 -0.5 -1 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) [1] Vdd = 5V 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) IP3 (dBm) Gain, Noise Figure & Rbias @ 2100 MHz [1] 38 -40 1.6 10000 Rbias(Ohms) Output IP3 vs. Rbias @ 2100 MHz [1] 100 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 Phase Balance [1] Amplifiers - Low Noise - SMT PHASE BALANCE (degrees) 2 1 0 -1 -2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) Rbias Idd (mA) Min (Ohms) Max (Ohms) R1 (Ohms) 3V 10K [2] Open Circuit 10K 42 120 64 5V 0 Open Circuit 470 82 10K 112 [2] With Vdd= 3V and Rbias < 10K Ohm may result in the part becoming conditionally unstable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) 6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 19.35 mW/°C above 85 °C) 1.26 W Thermal Resistance (channel to ground paddle) 51.67 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 10K) Vdd (V) Idd (mA) 2.7 31 3.0 42 3.3 52 4.5 95 5.0 112 5.5 129 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Vdd = 5V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC818LP4E v01.0809 Outline Drawing Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Package Information Part Number Package Body Material Lead Finish HMC818LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] 818 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 235 °C 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Pin Number Function Description 1, 6 RFIN1, 2 This pin is DC coupled an off chip DC blocking capacitor is required. 2, 5, 7, 12, 14, 17, 19, 24 GND Package bottom must be connected to RF/DC ground. 3, 4, 9, 10, 21, 22 N/C No connection required. These pins may be connected to RF/ DC ground without affecting performance. 23, 20, 8, 11 Vdd1, 2, 3, 4 Power supply voltage for each amplifier. Choke inductor and bypass capacitors are required. See application circuit. 18, 13 RFOUT1, 2 This pin is matched to 50 Ohms. 16, 15 RES1, 2 These pins are used to set the DC current Idd2 and Idd4 in each amplifier via an external biasing resistor. See application circuit. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT 7 Pin Descriptions 7-8 HMC818LP4E v01.0809 Application Circuit Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 122727 Item Description J1 - J4 PCB Mount SMA RF Connector J5, J6 2mm Vertical Molex 8pos Connector C1, C2 220 pF Capacitor, 0402 Pkg.. C3, C5, C7, C9 1000 pF Capacitor, 0603 Pkg. C4, C6, C8, C10 0.47 µF Capacitor, 0603 Pkg. C11, C12 10 kpF Capacitor, 0402 Pkg. C13, C14 0 Ohm Resistor, 0402 Pkg. L5, L7 15 nH Inductor, 0603 Pkg. L6, L8 6.8 nH Inductor, 0603 Pkg. R1, R2 (Rbias 1, 2) 10k Ohm Resistor, 0402 Pkg. U1 HMC818LP4(E) Amplifier PCB [2] 122725 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 10