HTSEMI 1SS401

1SS4 01
Schottoky DIODES
SOT-323
FEATURES
Low forward voltage : VF=0.38V(typ.)
Low reverse current : IR=50uA(max)
Small total capacitance : CT =46pF(typ.)
1.ANODE
2. NC
3. CATHODE
MARKING:
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
25
V
Peak Repetitive Peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
20
V
DC Blocking
Voltage
VR
Forward Continuous Current
IFM
700
mA
Average Rectified Output Current
IO
300
mA
Power Dissipation
Pd
100
mW
Junction temperature
TJ
125
℃
TSTG
-55-125
℃
Storage temperature range
Electrical Characteristics @TA=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Symbol
Min.
V (BR)R
20
Typ.
Max.
Unit
Conditions
V
IR=100μA
VF1
0.16
V
IF=1mA
VF2
0.22
V
IF=10mA
VF3
0.38
0.45
V
IF=300mA
50
uA
VR=20V
pF
VR=0,f=1MHz
Reverse current
IR
Capacitance between terminals
CT
46
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
1SS4 01
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05