2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 μA DC current gain hFE VCE=-3V,IC=-10mA Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range VCE(sat) Cob 82 390 IC=-100mA,IB=-10mA -0.4 VCE=-5V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz 200 MHz 7 pF hFE P Q R 82 - 180 120 - 270 180 - 390 １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 0 3 6 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５