2SB1 07 3 TRANSISTOR FEATURES z Low collector-emitter saturation voltage VCE(sat) z Large peak collector current IC MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -7 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-7V,IC=0 -0.1 μA DC current gain hFE VCE=-2V,IC=-2A Collector-emitter saturation voltage VCE(sat) fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking 120 315 IC=-3A,IB=-100mA -1 VCE=-6V,IC=-50mA,f=200MHz 120 MHz VCB=-20V,IE=0,f=1MHz 40 pF hFE Q R 120-205 180-315 IQ IR １ JinYu semiconductor V www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 07 3 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５