A94 TRANSISTOR (PNP) FEATURES High voltage SOT-89-3L 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units 2 3 VCBO Collector-Base Voltage -400 V 1. BASE VCEO Collector-Emitter Voltage -400 V 2. COLLECTOR VEBO Emitter-Base Voltage -5 V 3. EMITTER IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR) CBO IC= -100μA, IE=0 -400 V Collector-emitter breakdown voltage V(BR) CEO IC= -1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR) EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-400V, IB=0 -5 μA Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 μA hFE(1) VCE=-10V, IC=-10mA 80 hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100mA 60 hFE(4) VCE=-10V, IC=-50mA 80 VCE (sat) IC=-10mA, IB=-1mA -0.2 V VCE (sat) IC=-50mA, IB=-5mA -0.3 V VBE (sat) IC=-10mA, IB= -1mA -0.75 V 300 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE=-20V, IC=-10mA f =30MHz 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ Typical Characteristics Static Characteristic -100uA -12 -90uA -10 IC —— COMMON EMITTER VCE= -10V 300 Ta=100℃ -80uA -70uA -8 hFE 500 COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE -14 COLLECTOR CURRENT IC (mA) A94 -60uA -50uA -6 -40uA -4 -30uA Ta=25℃ 100 30 -20uA -2 IB=-10uA -0 10 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat —— -3 -1 -10 -100 -30 COLLECTOR CURRENT IC VBEsat -1000 —— IC -200 (mA) IC Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -10 -20 VCE (V) -3 -1 -0.3 Ta=100 ℃ -0.1 Ta=25℃ Ta=100 ℃ -300 -0.03 β=10 -0.01 -1 -30 -10 -3 COLLECTOR CURRENT IC -200 —— IC -100 VBE TRANSITION FREQUENCY fT (MHz) COMMON EMITTER VCE=-10V -400 fT 100 -3 -1 -200 -600 -800 —— -10 -3 (pF) CAPACITANCE C 10 3 1 -0.1 —— IC (mA) Ta 500 Ta=25 ℃ Cob 30 PC 600 -100 -30 COLLECTOR CURRENT f=1MHz IE=0/IC=0 100 IC Ta=25℃ VCB/VEB Cib 400 300 200 100 0 -0.3 -1 REVERSE VOLTAGE -10 -3 V -20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta (℃ ) ２ JinYu semiconductor -200 (mA) COMMON EMITTER VCE= -20V 10 -1000 COLLECTOR POWER DISSIPATION PC (mW) Cob/Cib —— IC 30 BASE-EMMITER VOLTAGE VBE (mV) 300 -100 COLLECTOR CURRENT T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC (mA) -10 -30 -10 -3 (mA) -100 -30 β=10 -100 -1 -200 www.htsemi.com Ｄａｔｅ：２０１１／０５ 150