SS8 550 TRANSISTOR(PNP) SOT–23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V 2. EMITTER 3. COLLECTOR IC Collector Current -1.5 A PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 120 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V -1 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=-1V, IC=-10mA VCE=-10V,IC=-50mA , f=30MHz VCB=-10V, IE=0, f=1MHz 100 MHz 20 CLASSIFICATION OF hFE(1) RANK L H J RANGE 120–200 200–350 300–400 MARKING Y2 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF hFE Static Characteristic 500 -180 —— IC 1mA Ta=100℃ 0.9mA 0.8mA -120 0.7mA -100 0.6mA hFE -140 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -160 0.5mA -80 0.4mA -60 0.3mA -40 100 0.2mA -20 IB=0.1mA -0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 COLLECTOR-EMITTER VOLTAGE VBEsat —— -4.0 VCE -4.5 VCE=-1V 10 -0.1 -5.0 -1 (V) -10 IC VCEsat -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -900 -800 Ta=25℃ -700 -600 Ta=100℃ -500 -100 COLLECTOR CURRENT -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ -400 -300 IC -1000 (mA) IC —— -100 Ta=100℃ Ta=25℃ -10 β=10 -200 -0.1 -1 -10 -100 COLLECTOR CURRENT VBE —— IC β=10 -1 0.2 -1000 -1 -10 -100 COLLECTOR CURRENT (mA) IC Cob/ Cib -1000 IC —— VCB/ VEB 100 f=1MHz IE=0/ IC=0 (pF) -100 o Ta=25 C Cob C o Ta=100 C Ta=25℃ CAPACITANCE IC (mA) Cib COLLCETOR CURRENT -1000 (mA) -10 -1 VCE=-1V -0.1 -200 -300 -400 -500 -600 -700 BASE-EMMITER VOLTAGE fT -900 —— IC Pc COLLECTOR POWER DISSIPATION Pc (mW) VCE-10V o Ta=25 C 10 -10 COLLECTOR CURRENT -10 —— V Ta -100 IC (mA) 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) ２ JinYu semiconductor 20 (V) 350 100 -1 -1 REVERSE VOLTAGE (mV) fT TRANSITION FREQUENCY 1 -0.2 -1000 (MHz) 500 VBE -800 www.htsemi.com Ｄａｔｅ：２０１１／０５ 150