BAP51-02 GENERAL PURPOSE PIN DIODES 62' FEATURES y Low diode capacitance y MARKING: A5 Low diode forward resistance Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Continuous reverse voltage VR 60 V Continuous Forward Current IF 50 mA Power Dissipation (TA=90℃) Pd 715 mW RθJS 85 ℃/W Junction temperature Tj -65~+150 ℃ Storage temperature TSTG -65~+150 ℃ Thermal Resistance from Junction to soldering point Electrical Ratings @TA=25℃ Parameter Symbol Min. Continuous reverse voltage VR 50 Forward voltage VF Reverse current IR Cd1 Diode capacitance Diode forward resistance Typ. Max. Unit Conditions V IR=10μA 1.1 V IF=50mA 100 nA VR=50V pF VR=0V,f=1MHz 0.4* Cd2 0.55 pF VR=1V,f=1MHz Cd3 0.35 pF VR=5V,f=1MHz rD 9 Ω IF=0.5mA , f=100MHz;note1 rD 6.5 Ω IF=1mA , f=100MHz;note1 rD 2.5 Ω IF=10mA , f=100MHz;note1 Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BAP51-02 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５